Two pairs of diametrically opposed Schottky surface barrier diodes in a modified scanning electron microscope (SEM) are used to reconstruct surface elevations and composition differences. An empirically determined function of difference of signals from opposing diodes is used to calculate slopes, which are then integrated to elevations by an efficient 2-dimensional Fast Fourier Transform. Composition differences are distinguished by variations in the overall backscattered electron (BSE) intensity estimated by the sum of the four diode signals. Arithmetic average roughness measurements from the BSE device are within 10% of stylus surface tracer measurements when surface slopes average less than 6 degrees and maximum slopes are less than 45°;...
The backscattered electron (BSE) induced secondaries (SE2) emerge from an area that is usually many ...
Multi-scale surface topography is critical to surface function, yet the very smallest scales are not...
In a scanning electron microscope (SEM) an electron beam sets up an omni-directional source of scatt...
Two pairs of diametrically opposed Schottky surface barrier diodes in a modified scanning electron m...
Signal mixing technique using asymetrically placed backscattered electron detectors in a scanning el...
The design and development of a device to quantitatively measure surface texture using backscattered...
A Monte Carlo method using Mott cross-sections for elastic scattering and a modification of the Beth...
Using a two-or multiple detector system for secondary electrons (SE) or backscattered electrons (BSE...
Sometimes, the sample to be examined in the SEM will consist of a compositionally non-uniform substr...
Origins of topographic contrast in the scanning electron microscope (SEM) are different at different...
Backscattered electron (BSE) profiles from single interfaces in bulk cross-section semiconductor spe...
Backscattered-electron scanning electron microscopy (BSE-SEM) imaging is a valuable technique for ma...
Compositional profiles across CdTe/Cd(y)Hg(1-y)Te interfaces in bulk specimens have been determined ...
This study is concerned with backscattered electron scanning electron microscopy (BSE SEM) contrast ...
The backscattered electron signal in scanning electron microscopy is sensitive to changes in the ato...
The backscattered electron (BSE) induced secondaries (SE2) emerge from an area that is usually many ...
Multi-scale surface topography is critical to surface function, yet the very smallest scales are not...
In a scanning electron microscope (SEM) an electron beam sets up an omni-directional source of scatt...
Two pairs of diametrically opposed Schottky surface barrier diodes in a modified scanning electron m...
Signal mixing technique using asymetrically placed backscattered electron detectors in a scanning el...
The design and development of a device to quantitatively measure surface texture using backscattered...
A Monte Carlo method using Mott cross-sections for elastic scattering and a modification of the Beth...
Using a two-or multiple detector system for secondary electrons (SE) or backscattered electrons (BSE...
Sometimes, the sample to be examined in the SEM will consist of a compositionally non-uniform substr...
Origins of topographic contrast in the scanning electron microscope (SEM) are different at different...
Backscattered electron (BSE) profiles from single interfaces in bulk cross-section semiconductor spe...
Backscattered-electron scanning electron microscopy (BSE-SEM) imaging is a valuable technique for ma...
Compositional profiles across CdTe/Cd(y)Hg(1-y)Te interfaces in bulk specimens have been determined ...
This study is concerned with backscattered electron scanning electron microscopy (BSE SEM) contrast ...
The backscattered electron signal in scanning electron microscopy is sensitive to changes in the ato...
The backscattered electron (BSE) induced secondaries (SE2) emerge from an area that is usually many ...
Multi-scale surface topography is critical to surface function, yet the very smallest scales are not...
In a scanning electron microscope (SEM) an electron beam sets up an omni-directional source of scatt...