One of the most important fields in semiconductor physics is study the nanostructure of materials with dimensions less than 2-like quantum dots —QD. Si quantum dot is one of typical material used in nanostructure, because of their unique and useful functions caused from quantized electron energy state. Although various formation techniques have been developed so far to achieve high-density and nanometer-size. In general silicon QDs can be formed on non-crystalline substrates, such as glass. Si quantum dots have been successfully grown on corning glass (7059) substrate. This nucleation starts to appear at first 7 min of QDs growth formation until stable conditions of the dots. The measurement results estimated average dots size to be 53 nm i...
Nanocrystalline silicon is a promising material for future ultralarge scale integrated circuits and ...
Thin film stacks, made of Si-rich SiO alternated with SiO(2) layers, have been deposited by reactive...
We have grown Ge quantum dots by Physical Vapor Deposition (PVD) on step bunched Si(111) surfaces, v...
Silicon quantum dots have been grown on sapphire substrate using a self-assembly method of physical ...
Silicon quantum dots have been grown on sapphire substrate using a self-assembly method of physical ...
Recent progress in the fabrication technology of silicon nanostructures has made possible observatio...
Silicon nanodots is a common zero-dimensional nanomaterial investigated for single-electron device a...
Surface energies per unit area, ?LN = 1.44 Jm-2, ?NS = 19 - 60 Jm-2 and ?LS = 0.74 Jm-2Critical ener...
Si quantum dots in SiO2/Si3N4 hybrid matrix on quartz substrates were fabricated by magnetron sputte...
Quantum dots (QDs) are actually easily produced by self-assembling during heteroepitaxial growth of ...
Si nanoquantum dots have been formed by self-assembled growth on the both Si-O-Si and Si-OH bonds te...
Silicon nanocrystals or quantum dots are non-toxic and exhibit unique size tunable opto-electronic p...
Silicon nanoparticle, typically when in the quantum dot region of less than 10nm, demonstrated uniqu...
Self-assembled quantum dots (QD) of GaAs on Si-based substrates offer the possibility of combing hig...
The nanoscale ordering of inorganic semiconductor quantum dots (QDs) is crucial to obtain reliable s...
Nanocrystalline silicon is a promising material for future ultralarge scale integrated circuits and ...
Thin film stacks, made of Si-rich SiO alternated with SiO(2) layers, have been deposited by reactive...
We have grown Ge quantum dots by Physical Vapor Deposition (PVD) on step bunched Si(111) surfaces, v...
Silicon quantum dots have been grown on sapphire substrate using a self-assembly method of physical ...
Silicon quantum dots have been grown on sapphire substrate using a self-assembly method of physical ...
Recent progress in the fabrication technology of silicon nanostructures has made possible observatio...
Silicon nanodots is a common zero-dimensional nanomaterial investigated for single-electron device a...
Surface energies per unit area, ?LN = 1.44 Jm-2, ?NS = 19 - 60 Jm-2 and ?LS = 0.74 Jm-2Critical ener...
Si quantum dots in SiO2/Si3N4 hybrid matrix on quartz substrates were fabricated by magnetron sputte...
Quantum dots (QDs) are actually easily produced by self-assembling during heteroepitaxial growth of ...
Si nanoquantum dots have been formed by self-assembled growth on the both Si-O-Si and Si-OH bonds te...
Silicon nanocrystals or quantum dots are non-toxic and exhibit unique size tunable opto-electronic p...
Silicon nanoparticle, typically when in the quantum dot region of less than 10nm, demonstrated uniqu...
Self-assembled quantum dots (QD) of GaAs on Si-based substrates offer the possibility of combing hig...
The nanoscale ordering of inorganic semiconductor quantum dots (QDs) is crucial to obtain reliable s...
Nanocrystalline silicon is a promising material for future ultralarge scale integrated circuits and ...
Thin film stacks, made of Si-rich SiO alternated with SiO(2) layers, have been deposited by reactive...
We have grown Ge quantum dots by Physical Vapor Deposition (PVD) on step bunched Si(111) surfaces, v...