The parallel connection of a Silicon (Si)-based IGBT and a Silicon Carbide (SiC)-based MOSFET forming a so called hybrid switch (HyS) can be used to exploit the advantageous features of both semiconductor and materials technologies. In this paper, a HyS-based inverter designed for the application of Electric Vehicle (EV) traction is compared to the conventional inverter assembled with Si-based IGBTs and SiC-based MOS-FETs. According to different standardized driving cycles, EVs operate in low partial load for a considerable amount of the time. Therefore, in this application, semiconductor conduction losses can be considerably reduced when unipolar switches such as MOSFETs are used. All in all, this work shows that the HyS configuration cons...
Silicon carbide (SiC) is seen as a potential replacement power semiconductor material because it ca...
A continuously growing penetration of electric (EV) and hybrid electric (HEV) vehicles, reinforced...
With the fast development of silicon carbide (SiC) technology, SiC-based power semiconductor devices...
The parallel connection of a Silicon (Si)-based IGBT and a Silicon Carbide (SiC)-based MOSFET formin...
AbstractIn this paper, the performance of both SiC-MOSFETs and Si-IGBTs based electric vehicle (EV) ...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
The advent of power devices based on Wide BandGap (WBG) semiconductor materials, like the Silicon Ca...
This paper investigates the inverter nonlinearities in a drive system based on silicon carbide metal...
One of the emerging research topics in the propulsion drive of the electric vehicles is the improvem...
One of the emerging research topics in the propulsion drive of the electric vehicles is the improvem...
A continuously growing penetration of electric (EV) and hybrid electric (HEV) vehicles, reinforced ...
AbstractIn this paper, the performance of both SiC-MOSFETs and Si-IGBTs based electric vehicle (EV) ...
The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior fea...
The DC/DC converters and DC/AC inverters based on silicon carbide (SiC) devices as battery interface...
Silicon carbide (SiC) is seen as a potential replacement power semiconductor material because it ca...
A continuously growing penetration of electric (EV) and hybrid electric (HEV) vehicles, reinforced...
With the fast development of silicon carbide (SiC) technology, SiC-based power semiconductor devices...
The parallel connection of a Silicon (Si)-based IGBT and a Silicon Carbide (SiC)-based MOSFET formin...
AbstractIn this paper, the performance of both SiC-MOSFETs and Si-IGBTs based electric vehicle (EV) ...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
The advent of power devices based on Wide BandGap (WBG) semiconductor materials, like the Silicon Ca...
This paper investigates the inverter nonlinearities in a drive system based on silicon carbide metal...
One of the emerging research topics in the propulsion drive of the electric vehicles is the improvem...
One of the emerging research topics in the propulsion drive of the electric vehicles is the improvem...
A continuously growing penetration of electric (EV) and hybrid electric (HEV) vehicles, reinforced ...
AbstractIn this paper, the performance of both SiC-MOSFETs and Si-IGBTs based electric vehicle (EV) ...
The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior fea...
The DC/DC converters and DC/AC inverters based on silicon carbide (SiC) devices as battery interface...
Silicon carbide (SiC) is seen as a potential replacement power semiconductor material because it ca...
A continuously growing penetration of electric (EV) and hybrid electric (HEV) vehicles, reinforced...
With the fast development of silicon carbide (SiC) technology, SiC-based power semiconductor devices...