Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2
- Satta Alessandra, A.
- Schuhmacher, J.
- Whelan, C. M.
- Vandervorst, W.
- Brongersma, S. H.
- Beyer, G. P.
- Maex, K.
- Vantomme, A.
- Viitanen, M. M.
- Brongersma, H. H.
- Besling, W. F.A.
DOIAbstract
The growth mechanism and continuity of atomic layer deposited (ALD) TiN formed by sequentially controlled reaction of TiCl4 and NH3 on thermal SiO2 were studied. The extent of the transient region and the rapid closure of the film was affected by growth at different temperatures (350 °C and 400 °C). It was found that a three-dimensional growth of islands characterized the ALD TiN growth on SiO2
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