The activities of a developmental program to design, fabricate and test an absolute pressure transducer based upon the piezojunction properties of silicon are summarized. The prime problem addressed is the development of a housing capable of applying the high stress levels needed for sensitive piezojunction operation but at the same, free from the creep effects and the fragility that limit the usefulness of previous designs. The first part of the report describes the initial fabrication and test and reviews the theory of sensor performance. The second part incorporates two recommendations of the first part (the use of commercially manufactured silicon planar mesa diodes and the adoption of an all-silicon structure for loading) and presents ...
The need for semiconductor pressure transducers that can be used in applications requiring operation...
The report presents the results of research and development on the design and manufacturing technolo...
In this paper, a pressure sensor for low pressure detection (0.5 kPa–40 kPa) is proposed. In one str...
The characteristics of silicon pressure sensors with an ultra-small diaphragm are described. The pre...
The advantages of silicon piezoresistive strain sensing technology are being used to achieve the obj...
The breadboard feasibility model of a silicon piezoresistive pressure transducer suitable for space ...
The objective of the research project described is to define and demonstrate methods to advance the ...
The development of a piezo-resistive pressure transducer is discussed suitable for recording pressur...
Piezojunction effect and silicon needle considered as sensory devices in accelerometers and transduc...
Miniaturized transducers are fabricated from commercially available four-arm semiconductor gages; tr...
Feasibility of using p-n-junction devices as transducer for accelerometer - mechanical stress effect...
A silicon on silicon pressure sensor has been developed for use at very high temperatures (1000 F). ...
Transducer has thin piezoelectric sensing element of 0.051-cm-thick lead zirconate titanate crystal ...
Miniature solid state, direction sensitive, stress transducer design with bonded semiconductive piez...
MEMS piezoresistive sound detectors have been fabricated using the dissolved wafer process for the f...
The need for semiconductor pressure transducers that can be used in applications requiring operation...
The report presents the results of research and development on the design and manufacturing technolo...
In this paper, a pressure sensor for low pressure detection (0.5 kPa–40 kPa) is proposed. In one str...
The characteristics of silicon pressure sensors with an ultra-small diaphragm are described. The pre...
The advantages of silicon piezoresistive strain sensing technology are being used to achieve the obj...
The breadboard feasibility model of a silicon piezoresistive pressure transducer suitable for space ...
The objective of the research project described is to define and demonstrate methods to advance the ...
The development of a piezo-resistive pressure transducer is discussed suitable for recording pressur...
Piezojunction effect and silicon needle considered as sensory devices in accelerometers and transduc...
Miniaturized transducers are fabricated from commercially available four-arm semiconductor gages; tr...
Feasibility of using p-n-junction devices as transducer for accelerometer - mechanical stress effect...
A silicon on silicon pressure sensor has been developed for use at very high temperatures (1000 F). ...
Transducer has thin piezoelectric sensing element of 0.051-cm-thick lead zirconate titanate crystal ...
Miniature solid state, direction sensitive, stress transducer design with bonded semiconductive piez...
MEMS piezoresistive sound detectors have been fabricated using the dissolved wafer process for the f...
The need for semiconductor pressure transducers that can be used in applications requiring operation...
The report presents the results of research and development on the design and manufacturing technolo...
In this paper, a pressure sensor for low pressure detection (0.5 kPa–40 kPa) is proposed. In one str...