Add to ORKGThe development of a low power, high performance MOS 256-bit random assess memory with beam leads is discussed. Beam lead process development on silicon-on-sapphire (SOS) is also discussed, and initial electrical results on beam lead SOS TA5388 devices are presented. A comparison of the beam leaded 256-bit RAM (TA6567) layout is made with the non-beam leaded version (TA6473)
A study was conducted to determine how major improvements in spacecraft computer systems can be obta...
The use of aluminum beam lead devices in hybrid circuits is described by modification of existing pr...
Large scale integration microelectronic wafer and package testing including parametric and functiona...
The development of a beam-leaded low power, high performance metal-oxide-semiconductor (MOS), 256-bi...
The design of a MOS 256-bit Random Access Memory (RAM) is discussed. Technological achievements comp...
Continuing development and expansion of a series of P-channel MOSFET circuits in flight data systems...
The results are presented of a program to demonstrate the processes for fabricating complementary MI...
The technologies of low power TTL and beam lead processing were merged into a single product family....
Recent work for the NASA Electronic Parts and Packaging Program Power MOSFET task is presented. The ...
Beam lead technology for microcircuit interconnections with applications to metallization, passivati...
Recently, the Low-Energy Demonstration Accelerator (LEDA) portion of the Accelerator Production of T...
The performance of large scale integration photodiode arrays in a linear array scan (pushbroom) brea...
The operations analysis and equipment evaluations pertinent to the design of an automated production...
A high-performance processor circuit called the SC-3 has been developed to meet the requirements of ...
Instability, high threshold voltage and gamma radiation sensitivity of metal-oxide-silicon transisto...
A study was conducted to determine how major improvements in spacecraft computer systems can be obta...
The use of aluminum beam lead devices in hybrid circuits is described by modification of existing pr...
Large scale integration microelectronic wafer and package testing including parametric and functiona...
The development of a beam-leaded low power, high performance metal-oxide-semiconductor (MOS), 256-bi...
The design of a MOS 256-bit Random Access Memory (RAM) is discussed. Technological achievements comp...
Continuing development and expansion of a series of P-channel MOSFET circuits in flight data systems...
The results are presented of a program to demonstrate the processes for fabricating complementary MI...
The technologies of low power TTL and beam lead processing were merged into a single product family....
Recent work for the NASA Electronic Parts and Packaging Program Power MOSFET task is presented. The ...
Beam lead technology for microcircuit interconnections with applications to metallization, passivati...
Recently, the Low-Energy Demonstration Accelerator (LEDA) portion of the Accelerator Production of T...
The performance of large scale integration photodiode arrays in a linear array scan (pushbroom) brea...
The operations analysis and equipment evaluations pertinent to the design of an automated production...
A high-performance processor circuit called the SC-3 has been developed to meet the requirements of ...
Instability, high threshold voltage and gamma radiation sensitivity of metal-oxide-silicon transisto...
A study was conducted to determine how major improvements in spacecraft computer systems can be obta...
The use of aluminum beam lead devices in hybrid circuits is described by modification of existing pr...
Large scale integration microelectronic wafer and package testing including parametric and functiona...