A 190 x 244 element charge coupled area image sensor has been designed, fabricated and tested. This sensor employs an interline transfer organization and buried n-channel technology. It features a novel on-chip charge integrator and a distributed floating gate amplifier for high and low light level applications. The X-Y element count has been chosen to establish the capability of producing an NTSC compatible video signal. The array size is also compatible with the Super 8 lens format. The first few sample devices have been successfully operated at full video bandwidth for both high and low light levels with the charge amplifier system
An image sensor comprising an array of 128 by 50 super pixels, column parallel current conveyors and...
This work investigated the physical properties and fabrication feasibility of charge coupled devices...
This paper reports on two new advancements in CCD technology. The first area of development has prod...
An evaluation of a charge-coupled device (CCD) image sensors for use in spacecraft-borne imaging sys...
This thesis presents a CMOS image sensor which can implement the charge domain interlacing principle...
A five cask level process was used to fabricate single level, poly gated charge coupled devices inte...
Backside illuminated CCD imagers with 100 x 160 resolution elements have been fabricated using doubl...
A charge coupled device designed for celestial spectroscopy has achieved readout noise as low as 0.6...
A charge coupled device designed for celestial spectroscopy has achieved readout noise as low as 0.6...
An interline CCD sensing device for use in a camera system, includes an imaging area sensitive to im...
A 512 x 320 element charge coupled imager has been fabricated and tested under cooled slow scan cond...
A two dimensional photosensors array with integrated CMOS charge amplifier intended for use as a lib...
Charge-coupled devices (CCD's) were recognized for their potential as an imaging technology almost i...
A charge coupled device (CCD) imaging camera system has been developed as part of the Ground Test Ac...
A new type of imaging sensor suitable for digital SLR cameras has been developed. Each pixel in the ...
An image sensor comprising an array of 128 by 50 super pixels, column parallel current conveyors and...
This work investigated the physical properties and fabrication feasibility of charge coupled devices...
This paper reports on two new advancements in CCD technology. The first area of development has prod...
An evaluation of a charge-coupled device (CCD) image sensors for use in spacecraft-borne imaging sys...
This thesis presents a CMOS image sensor which can implement the charge domain interlacing principle...
A five cask level process was used to fabricate single level, poly gated charge coupled devices inte...
Backside illuminated CCD imagers with 100 x 160 resolution elements have been fabricated using doubl...
A charge coupled device designed for celestial spectroscopy has achieved readout noise as low as 0.6...
A charge coupled device designed for celestial spectroscopy has achieved readout noise as low as 0.6...
An interline CCD sensing device for use in a camera system, includes an imaging area sensitive to im...
A 512 x 320 element charge coupled imager has been fabricated and tested under cooled slow scan cond...
A two dimensional photosensors array with integrated CMOS charge amplifier intended for use as a lib...
Charge-coupled devices (CCD's) were recognized for their potential as an imaging technology almost i...
A charge coupled device (CCD) imaging camera system has been developed as part of the Ground Test Ac...
A new type of imaging sensor suitable for digital SLR cameras has been developed. Each pixel in the ...
An image sensor comprising an array of 128 by 50 super pixels, column parallel current conveyors and...
This work investigated the physical properties and fabrication feasibility of charge coupled devices...
This paper reports on two new advancements in CCD technology. The first area of development has prod...