The etch-back epitaxy process is described for producing thin, graded composition GaAlAs layers. The palladium-aluminum contact system is discussed along with its associated problems. Recent solar cell results under simulated air mass zero light and at elevated temperatures are reported and the growth of thin polycrystalline GaAs films on foreign substrates is developed
Gallium arsenide, a commercially valuable semiconductor, has been prepared from the melt (M.P. 1237C...
Recent trends in performance specifications and functional requirements have brought about the need ...
The performance of gallium arsenide solar cells grown on Ge substrates is discussed. In some cases t...
Crystal growth procedures, fabrication techniques, and theoretical analysis were developed in order ...
The power to weight ratio of GaAs cells can be reduced by fabricating devices using thin GaAs films ...
The three types of solar cells investigated were: (1) one consisting of a nGaAs substrate, a Zn dope...
Several oxidation techniques are discussed which have been found to increase the open circuit (V sub...
Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epit...
The development, fabrication, and failure modes of AlxGa(1-x)As-GaAs heteroface solar cells are desc...
Two processes were considered: the infinite melt process and the finite melt process. The only techn...
In order to prevent disastrous global warming the manufacturing capacity of renewable energy power s...
With experience at increasing production levels, GaAs/Ge cells are proving their effectiveness for s...
Recent experience in producing GaAs solar cells, to meet the full requirements of space-array manufa...
Recent developments at JPL have demonstrated that high conversion efficiencies are found with GaAs m...
Available information on liquid phase, vapor phase (including chemical vapor deposition) and molecul...
Gallium arsenide, a commercially valuable semiconductor, has been prepared from the melt (M.P. 1237C...
Recent trends in performance specifications and functional requirements have brought about the need ...
The performance of gallium arsenide solar cells grown on Ge substrates is discussed. In some cases t...
Crystal growth procedures, fabrication techniques, and theoretical analysis were developed in order ...
The power to weight ratio of GaAs cells can be reduced by fabricating devices using thin GaAs films ...
The three types of solar cells investigated were: (1) one consisting of a nGaAs substrate, a Zn dope...
Several oxidation techniques are discussed which have been found to increase the open circuit (V sub...
Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epit...
The development, fabrication, and failure modes of AlxGa(1-x)As-GaAs heteroface solar cells are desc...
Two processes were considered: the infinite melt process and the finite melt process. The only techn...
In order to prevent disastrous global warming the manufacturing capacity of renewable energy power s...
With experience at increasing production levels, GaAs/Ge cells are proving their effectiveness for s...
Recent experience in producing GaAs solar cells, to meet the full requirements of space-array manufa...
Recent developments at JPL have demonstrated that high conversion efficiencies are found with GaAs m...
Available information on liquid phase, vapor phase (including chemical vapor deposition) and molecul...
Gallium arsenide, a commercially valuable semiconductor, has been prepared from the melt (M.P. 1237C...
Recent trends in performance specifications and functional requirements have brought about the need ...
The performance of gallium arsenide solar cells grown on Ge substrates is discussed. In some cases t...