The development of doped-germanium detectors which have optimized performance in the 30- to 120-mu m wavelength range and are capable of achieving the objectives of the infrared astronomical satellite (IRAS) space mission is discussed. Topics covered include the growth and evaluation of Ge:Ga and Ge:Be crystals, procedures for the fabrication and testing of detectors, irradiance calculations, detector responsivity, and resistance measurements through MOSFET. Test data are presented in graphs and charts
Bulk Ge:Be and Ge:Ga photoconductive devices with a typical crystal size of about 1 mm, are currentl...
Bulk Ge:Be and Ge:Ga photoconductive devices with a typical crystal size of about 1 mm, are currentl...
Bulk Ge:Be and Ge:Ga photoconductive devices with a typical crystal size of about 1 mm, are currentl...
Gallium-doped germanium far infrared detectors were evaluated at low temperatures and low background...
An effort to optimize gallium-doped germanium photoconductors (Ge:Ga) for use in space for sensitive...
Ge:Be photoconductors were developed for low photon background applications in the 30 to 50 MM wavel...
Seven gallium doped germanium (Ge:Ga) photoconductive infrared detectors were fabricated and mounted...
The detectors were fabricated from a Ge:Ga wafer from Eagle-Pitcher with a room temperature resistiv...
The environment above earth's atmosphere offers significant advantages in sensitivity and wavelength...
The development of stressed Ge:Ga detector arrays for far-infrared astronomy from the Kuiper Airborn...
PhDThis report describes an experimental study of the conduction and absorption mechanisms of Germa...
The Infrared Astronomical Satellite (IRAS)* has completed an unbiased all-sky survey at wavelengths ...
The Infrared Astronomical Satellite (IRAS)* has completed an unbiased all-sky survey at wavelengths ...
Bulk Ge:Be and Ge:Ga photoconductive devices with a typical crystal size of about 1 mm, are currentl...
Bulk Ge:Be and Ge:Ga photoconductive devices with a typical crystal size of about 1 mm, are currentl...
Bulk Ge:Be and Ge:Ga photoconductive devices with a typical crystal size of about 1 mm, are currentl...
Bulk Ge:Be and Ge:Ga photoconductive devices with a typical crystal size of about 1 mm, are currentl...
Bulk Ge:Be and Ge:Ga photoconductive devices with a typical crystal size of about 1 mm, are currentl...
Gallium-doped germanium far infrared detectors were evaluated at low temperatures and low background...
An effort to optimize gallium-doped germanium photoconductors (Ge:Ga) for use in space for sensitive...
Ge:Be photoconductors were developed for low photon background applications in the 30 to 50 MM wavel...
Seven gallium doped germanium (Ge:Ga) photoconductive infrared detectors were fabricated and mounted...
The detectors were fabricated from a Ge:Ga wafer from Eagle-Pitcher with a room temperature resistiv...
The environment above earth's atmosphere offers significant advantages in sensitivity and wavelength...
The development of stressed Ge:Ga detector arrays for far-infrared astronomy from the Kuiper Airborn...
PhDThis report describes an experimental study of the conduction and absorption mechanisms of Germa...
The Infrared Astronomical Satellite (IRAS)* has completed an unbiased all-sky survey at wavelengths ...
The Infrared Astronomical Satellite (IRAS)* has completed an unbiased all-sky survey at wavelengths ...
Bulk Ge:Be and Ge:Ga photoconductive devices with a typical crystal size of about 1 mm, are currentl...
Bulk Ge:Be and Ge:Ga photoconductive devices with a typical crystal size of about 1 mm, are currentl...
Bulk Ge:Be and Ge:Ga photoconductive devices with a typical crystal size of about 1 mm, are currentl...
Bulk Ge:Be and Ge:Ga photoconductive devices with a typical crystal size of about 1 mm, are currentl...
Bulk Ge:Be and Ge:Ga photoconductive devices with a typical crystal size of about 1 mm, are currentl...
Add to ORKG