Numerical study of coherent tunneling in a double-barrier structure

We present a transparent and simple theory describing coherent transport of charge carriers through a double-barrier resonant tunnelling structure, including charge build-up in a self-consistent way. Numerical analysis of this model gives I-V characteristics showing negative differential resistance (ndr) and an intrinsic bistability in the ndr region of the curve. We show that it is the charge storage within the quantum well from which the intrinsic bistability results