The CMOS/SOS design rules prepared by the RCA Solid State Technology Center (SSTC) are described. These rules specify the spacing and width requirements for each of the six design levels, the seventh level being used to define openings in the passivation level. An associated report, entitled Silicon-Gate CMOS/SOS Processing, provides further insight into the usage of these rules
Data for the beam-leaded silicon-on-sapphire (SOS) process using the TA5388 dual-complementary pair ...
A self-aligned gate definition process is proposed. Spacings between adjacent gates of 0.5 µm and sm...
The double layer metallization technology applied on p type silicon gate CMOS/SOS integrated circuit...
The important features of the multiport (double entry) automatic placement and routing programs for ...
A low cost, quick turnaround technique for generating custom metal oxide semiconductor arrays using ...
Major silicon-gate CMOS/SOS processes are described. Sapphire substrate preparation is also discusse...
The NASA/MSFC high speed CMOS/SOS standard cell family, designed to be compatible with the PR2D (Pla...
The STAR system developed by NASA enables any user with a logic diagram to design a semicustom digit...
The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a uni...
Modified fabrication technique for P-channel MOSFET devices eliminates problems involving gate place...
The complete sequence used to manufacture complementary metal oxide semiconductor (CMOS) integrated ...
The design of a MOS 256-bit Random Access Memory (RAM) is discussed. Technological achievements comp...
Design and performance of logic circuit chip for computerized design of MOS integrated circuit array
The operations analysis and equipment evaluations pertinent to the design of an automated production...
Combination of complementary MOS and complementary bipolar circuits on monolithic silicon chi
Data for the beam-leaded silicon-on-sapphire (SOS) process using the TA5388 dual-complementary pair ...
A self-aligned gate definition process is proposed. Spacings between adjacent gates of 0.5 µm and sm...
The double layer metallization technology applied on p type silicon gate CMOS/SOS integrated circuit...
The important features of the multiport (double entry) automatic placement and routing programs for ...
A low cost, quick turnaround technique for generating custom metal oxide semiconductor arrays using ...
Major silicon-gate CMOS/SOS processes are described. Sapphire substrate preparation is also discusse...
The NASA/MSFC high speed CMOS/SOS standard cell family, designed to be compatible with the PR2D (Pla...
The STAR system developed by NASA enables any user with a logic diagram to design a semicustom digit...
The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a uni...
Modified fabrication technique for P-channel MOSFET devices eliminates problems involving gate place...
The complete sequence used to manufacture complementary metal oxide semiconductor (CMOS) integrated ...
The design of a MOS 256-bit Random Access Memory (RAM) is discussed. Technological achievements comp...
Design and performance of logic circuit chip for computerized design of MOS integrated circuit array
The operations analysis and equipment evaluations pertinent to the design of an automated production...
Combination of complementary MOS and complementary bipolar circuits on monolithic silicon chi
Data for the beam-leaded silicon-on-sapphire (SOS) process using the TA5388 dual-complementary pair ...
A self-aligned gate definition process is proposed. Spacings between adjacent gates of 0.5 µm and sm...
The double layer metallization technology applied on p type silicon gate CMOS/SOS integrated circuit...