The laser cell scanner was used to characterize a number of solar cells made in various materials. An electron beam-induced current (EBIC) study was performed using a stereoscan scanning electron microscope. Planar p-n junctions were analyzed. A theory for the EBIC based on the analytical solution of the ambipolar diffusion equation under the influence of electron beam excitation parameter z (which is related to beam penetration), the junction depth Z sub j, the beam current and the surface recombination, was formulated and tested. The effect of a grain boundary was studied
This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion ...
This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion ...
We present advanced semiconductor diagnosis by using electron-beam-induced current (EBIC) technique....
Three-dimensional numerical simulations of electron-beam-induced current (EBIC) near a vertical sili...
The recombination activities were investigated on crystal defects, especially the grain boundaries o...
ABSTRACT: The p-n junction of crystalline silicon thin film solar cells on glass (CSG material) has ...
A highly resolving micro-light beam-induced current (µLBIC)-system is presented in this work. Based ...
In this work electron-beam-induced current (EBIC) is used to study the collection efficiency of emit...
The present tutorial review provides a practical guide to the analysis of semiconductor devices usin...
Gettering and passivation steps during solar cell processing influence the recombination activity of...
In this paper a method for studying p-n junctions is described. Different electron and ion beam char...
The present tutorial review provides a practical guide to the analysis of semiconductor devices usin...
As a general qualitative tool, the electron beam induced current (EBIC) method can be very useful in...
A novel analytical method applying combined electron beam induced current (EBIC) imaging based on sc...
The surface recombination velocity at grain boundaries as well as the intra-grain diffusion length c...
This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion ...
This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion ...
We present advanced semiconductor diagnosis by using electron-beam-induced current (EBIC) technique....
Three-dimensional numerical simulations of electron-beam-induced current (EBIC) near a vertical sili...
The recombination activities were investigated on crystal defects, especially the grain boundaries o...
ABSTRACT: The p-n junction of crystalline silicon thin film solar cells on glass (CSG material) has ...
A highly resolving micro-light beam-induced current (µLBIC)-system is presented in this work. Based ...
In this work electron-beam-induced current (EBIC) is used to study the collection efficiency of emit...
The present tutorial review provides a practical guide to the analysis of semiconductor devices usin...
Gettering and passivation steps during solar cell processing influence the recombination activity of...
In this paper a method for studying p-n junctions is described. Different electron and ion beam char...
The present tutorial review provides a practical guide to the analysis of semiconductor devices usin...
As a general qualitative tool, the electron beam induced current (EBIC) method can be very useful in...
A novel analytical method applying combined electron beam induced current (EBIC) imaging based on sc...
The surface recombination velocity at grain boundaries as well as the intra-grain diffusion length c...
This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion ...
This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion ...
We present advanced semiconductor diagnosis by using electron-beam-induced current (EBIC) technique....