Add to ORKGAn experiment in gallium arsenide liquid phase epitaxy was performed successfully on the SPAR 6 flight October 17, 1979. The design, fabrication, and testing of the experimental apparatus, and the performance and results of the experiment are discussed
Vapor phase crystal growth and preparation of gallium, indium, arsenic, phosphorous, and antimony al...
The imperfections in the grown crystals of electronic materials, such as compositional nonuniformity...
The technique of electromigration, i.e., electric field induced forced convection, can be used to gr...
Gallium arsenide, a commercially valuable semiconductor, has been prepared from the melt (M.P. 1237C...
The production of high quality crystals in space is a promising near-term application of microgravit...
A crystal growth experiment is reported on orbital space flights. The experiment was performed durin...
A systematic investigation of the effect of gravity driven fluid flow on GaAs crystal growth was per...
The program on Crystal Growth of Device Quality GaAs in Space was initiated in 1977. The initial sta...
The primary objectives of the program were to establish basic vapor transport and crystal growth pro...
The second year of operation of the Center for Commercial Crystal Growth in Space is described. This...
Specific work done during an indicated contract period was reviewed. An extensive survey of crystal ...
Many advanced electronic technologies and devices for the 1980's are based on sophisticated compound...
The mechanism of crystal growth by solution technique was studied. A low temperature solution crysta...
The experimental approach was directed along two main goals: (1) the implementation of an approach t...
The mechanism of crystal growth which may be affected by the space environment was studied. Conclusi...
Vapor phase crystal growth and preparation of gallium, indium, arsenic, phosphorous, and antimony al...
The imperfections in the grown crystals of electronic materials, such as compositional nonuniformity...
The technique of electromigration, i.e., electric field induced forced convection, can be used to gr...
Gallium arsenide, a commercially valuable semiconductor, has been prepared from the melt (M.P. 1237C...
The production of high quality crystals in space is a promising near-term application of microgravit...
A crystal growth experiment is reported on orbital space flights. The experiment was performed durin...
A systematic investigation of the effect of gravity driven fluid flow on GaAs crystal growth was per...
The program on Crystal Growth of Device Quality GaAs in Space was initiated in 1977. The initial sta...
The primary objectives of the program were to establish basic vapor transport and crystal growth pro...
The second year of operation of the Center for Commercial Crystal Growth in Space is described. This...
Specific work done during an indicated contract period was reviewed. An extensive survey of crystal ...
Many advanced electronic technologies and devices for the 1980's are based on sophisticated compound...
The mechanism of crystal growth by solution technique was studied. A low temperature solution crysta...
The experimental approach was directed along two main goals: (1) the implementation of an approach t...
The mechanism of crystal growth which may be affected by the space environment was studied. Conclusi...
Vapor phase crystal growth and preparation of gallium, indium, arsenic, phosphorous, and antimony al...
The imperfections in the grown crystals of electronic materials, such as compositional nonuniformity...
The technique of electromigration, i.e., electric field induced forced convection, can be used to gr...