Various models were constructed which will allow for the variation of system components. Computer studies were then performed using the models constructed in order to study the effects of various system changes. In particular, GaAs and Si flat plate solar power arrays were studied and compared. Series and shunt resistance models were constructed. Models for the chemical kinetics of the annealing process were prepared. For all models constructed, various parametric studies were performed
Gallium arsenide solar cells equal or supass the best silicon solar cells in efficiency, radiation r...
A computer program was used to analyze the illuminated I-V characteristics of four sets of gallium a...
Silicon and gallium arsenide arrays were studied and compared for low earth orbit (LE), geosynchrono...
The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature o...
Research results are reported for GaAs Schottky barrier solar cells, GaAlAs/GaAs heteroface solar ce...
The potential of ion implantation as a means to the development of high efficiency gallium arsenide ...
The thermal degradation of AlGaAs solar cells resulting from a long-term operation in a space enviro...
This is the second quarterly technical report on a program, the goal of which is to achieve high eff...
The development, fabrication, and failure modes of AlxGa(1-x)As-GaAs heteroface solar cells are desc...
Available information on liquid phase, vapor phase (including chemical vapor deposition) and molecul...
The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight oper...
A brief overview of the development of GaAs solar cell technology is provided. An 18 to 20 percent A...
Gallium arsenide is a versatile semiconductor used in many devices. Due to its nearly ideal bandgap ...
Several oxidation techniques are discussed which have been found to increase the open circuit (V sub...
Planar and concentrator solar array configurations based on silicon and gallium arsenide solar cells...
Gallium arsenide solar cells equal or supass the best silicon solar cells in efficiency, radiation r...
A computer program was used to analyze the illuminated I-V characteristics of four sets of gallium a...
Silicon and gallium arsenide arrays were studied and compared for low earth orbit (LE), geosynchrono...
The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature o...
Research results are reported for GaAs Schottky barrier solar cells, GaAlAs/GaAs heteroface solar ce...
The potential of ion implantation as a means to the development of high efficiency gallium arsenide ...
The thermal degradation of AlGaAs solar cells resulting from a long-term operation in a space enviro...
This is the second quarterly technical report on a program, the goal of which is to achieve high eff...
The development, fabrication, and failure modes of AlxGa(1-x)As-GaAs heteroface solar cells are desc...
Available information on liquid phase, vapor phase (including chemical vapor deposition) and molecul...
The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight oper...
A brief overview of the development of GaAs solar cell technology is provided. An 18 to 20 percent A...
Gallium arsenide is a versatile semiconductor used in many devices. Due to its nearly ideal bandgap ...
Several oxidation techniques are discussed which have been found to increase the open circuit (V sub...
Planar and concentrator solar array configurations based on silicon and gallium arsenide solar cells...
Gallium arsenide solar cells equal or supass the best silicon solar cells in efficiency, radiation r...
A computer program was used to analyze the illuminated I-V characteristics of four sets of gallium a...
Silicon and gallium arsenide arrays were studied and compared for low earth orbit (LE), geosynchrono...