Add to ORKGThe modified CG2000 crystal grower construction, installation, and machine check out was completed. The process development check out proceeded with several dry runs and one growth run. Several machine calibrations and functional problems were discovered and corrected. Exhaust gas analysis system alternatives were evaluated and an integrated system approved and ordered. Several growth runs on a development CG2000 RC grower show that complete neck, crown, and body automated growth can be achieved with only one operator input
Several experimental and projected Czochralski crystal growing process methods were studied and comp...
Several economic analyses had indicated that large-diameter, multiple ingot growth using a single cr...
During this reporting period, four more 100 kg continuous runs were completed to satisfy the six req...
The modified CG2000 crystal grower construction, installation, and machine check-out was completed. ...
The process development continued, with a total of nine crystal growth runs. One of these was a 150 ...
The goals in this program for advanced czochralski growth process to produce low cost 150 kg silicon...
Equipment developed for the manufacture of over 100 kg of silicon ingot from one crucible by rechang...
The growth of 100 kg of silicon single crystal material, ten cm in diameter or greater, and 150 kg o...
During the reporting period, a successful 100 kilogram run was performed. Six ingots of 13 cm diamet...
The purpose of the program is to demonstrate the growth of up to 150 kilograms of 6'' diameter singl...
The development of a Czochralski furnace that permits the growing of silicon crystals with a continu...
The development of equipment and processes to produce single crystal solar silicon by a continuous C...
A process for the continuous growth of crystals by the Czochralski method, suitable for producing si...
A summary of advanced Cz ingot-growth activities is presented. Five ingots (totalling 150 kg) were g...
Several experimental and projected Czochralski crystal growing process methods were studied and comp...
Several experimental and projected Czochralski crystal growing process methods were studied and comp...
Several economic analyses had indicated that large-diameter, multiple ingot growth using a single cr...
During this reporting period, four more 100 kg continuous runs were completed to satisfy the six req...
The modified CG2000 crystal grower construction, installation, and machine check-out was completed. ...
The process development continued, with a total of nine crystal growth runs. One of these was a 150 ...
The goals in this program for advanced czochralski growth process to produce low cost 150 kg silicon...
Equipment developed for the manufacture of over 100 kg of silicon ingot from one crucible by rechang...
The growth of 100 kg of silicon single crystal material, ten cm in diameter or greater, and 150 kg o...
During the reporting period, a successful 100 kilogram run was performed. Six ingots of 13 cm diamet...
The purpose of the program is to demonstrate the growth of up to 150 kilograms of 6'' diameter singl...
The development of a Czochralski furnace that permits the growing of silicon crystals with a continu...
The development of equipment and processes to produce single crystal solar silicon by a continuous C...
A process for the continuous growth of crystals by the Czochralski method, suitable for producing si...
A summary of advanced Cz ingot-growth activities is presented. Five ingots (totalling 150 kg) were g...
Several experimental and projected Czochralski crystal growing process methods were studied and comp...
Several experimental and projected Czochralski crystal growing process methods were studied and comp...
Several economic analyses had indicated that large-diameter, multiple ingot growth using a single cr...
During this reporting period, four more 100 kg continuous runs were completed to satisfy the six req...