A method and apparatus are disclosed for growing in a gravitational field a microscopic crystal from a solution. The solution is held in a vertical chamber which is relatively thin, the thin being generally perpendicular to the vertical. There is a substrate crystal disposed at either the upper or lower end of the chamber and the crystal grows from this substrate crystal in one direction. The temperature conditions of the solution are controlled so that, as the crystal forms, the effects of buoyant convection within the solution are minimized. This is accomplished in two different ways depending upon whether the crystal is grown from the upper or lower end of the chamber. When grown from the upper end of the chamber, the temperature of the ...
Mathematical model for impulsive heat releases by chemically generated waves in atmospher
Calculations were performed with computer models using three types of finite difference methods of t...
A method utilizing a device to spray noble gases to cool the site of silicon crystal growth is descr...
A method and apparatus for dynamically controlling the crystallization of molecules including a crys...
Specific work done during an indicated contract period was reviewed. An extensive survey of crystal ...
The demand for larger crystals is increasing especially in applications associated with the electron...
The mechanism of crystal growth by solution technique was studied. A low temperature solution crysta...
Various studies of the concentration of the solution around a growing crystal using interferometric ...
A device and method for detecting optimum protein crystallization conditions and for growing protein...
A crystal growth apparatus is presented. It utilizes a vapor diffusion method for growing protein cr...
Apparatus for implementing crystal growth by allowing mixing of solutions under microgravity conditi...
Electrocrystallization under microgravity conditions is proposed as a potential method of crystalliz...
The objective was to study thermocapillary convection in a transparent floating zone. The floating z...
This invention relates generally to control systems for controlling crystal growth, and more particu...
NASA has been interested in experimental ground based study to investigate the fundamental processes...
Mathematical model for impulsive heat releases by chemically generated waves in atmospher
Calculations were performed with computer models using three types of finite difference methods of t...
A method utilizing a device to spray noble gases to cool the site of silicon crystal growth is descr...
A method and apparatus for dynamically controlling the crystallization of molecules including a crys...
Specific work done during an indicated contract period was reviewed. An extensive survey of crystal ...
The demand for larger crystals is increasing especially in applications associated with the electron...
The mechanism of crystal growth by solution technique was studied. A low temperature solution crysta...
Various studies of the concentration of the solution around a growing crystal using interferometric ...
A device and method for detecting optimum protein crystallization conditions and for growing protein...
A crystal growth apparatus is presented. It utilizes a vapor diffusion method for growing protein cr...
Apparatus for implementing crystal growth by allowing mixing of solutions under microgravity conditi...
Electrocrystallization under microgravity conditions is proposed as a potential method of crystalliz...
The objective was to study thermocapillary convection in a transparent floating zone. The floating z...
This invention relates generally to control systems for controlling crystal growth, and more particu...
NASA has been interested in experimental ground based study to investigate the fundamental processes...
Mathematical model for impulsive heat releases by chemically generated waves in atmospher
Calculations were performed with computer models using three types of finite difference methods of t...
A method utilizing a device to spray noble gases to cool the site of silicon crystal growth is descr...