Intersatellite links are expected to play an increasingly important role in future satellite systems. Improved components are required to properly utilize the wide bandwidth allocated for intersatellite link applications around 60 GHz. IMPATT diodes offer the highest potential performance as solid state power sources for a 60 GHz transmitter. Presently available devices do not have the desired power and efficiency. High efficiency, high power IMPATT diodes for intersatellite link applications are being developed by NASA and other government agencies. The development of high efficiency 60 GHz IMPATT diodes by NASA is described
This report details the development of a 20-W solid state amplifier operating near 30 GHz. The IMPAT...
A transmitter is considered that consists of GaAs IMPATT and Read diodes operating in a microstrip c...
International Telemetering Conference Proceedings / October 13-15, 1981 / Bahia Hotel, San Diego, Ca...
The objective is to develop 60 GHz IMPATT diodes suitable for communications applications. The perfo...
The objective of this program is to develop 60 GHz GaAs IMPATT Diodes suitable for communications ap...
A single drift gallium arsenide (GaAs) Schottky barrier IMPATT diode and related components were dev...
Applications of intersatellite links operating at 60 GHz are reviewed. Likely scenarios, ranging fro...
This program is the result of the continuing demand and future requirement for a high data rate 60-G...
A new amplifier architecture was developed during this contract that is superior to any other solid ...
Described are the characterization and testing of a 20 W solid state amplifier operating in the Ka b...
The engineering development of a solid-state transmitter amplifier operating in the 20-GHz frequency...
Very promising preliminary experimental results have been obtained from GaAs IMPATT diodes at F-band...
Multikilowatt transmitter study for space communications satellites - amplifier design
Over the last ten years, NASA has undertaken an extensive program aimed at development of solid stat...
The small signal characteristics of DDR IMPATTs based on GaAs designed to operate at mm-wave window ...
This report details the development of a 20-W solid state amplifier operating near 30 GHz. The IMPAT...
A transmitter is considered that consists of GaAs IMPATT and Read diodes operating in a microstrip c...
International Telemetering Conference Proceedings / October 13-15, 1981 / Bahia Hotel, San Diego, Ca...
The objective is to develop 60 GHz IMPATT diodes suitable for communications applications. The perfo...
The objective of this program is to develop 60 GHz GaAs IMPATT Diodes suitable for communications ap...
A single drift gallium arsenide (GaAs) Schottky barrier IMPATT diode and related components were dev...
Applications of intersatellite links operating at 60 GHz are reviewed. Likely scenarios, ranging fro...
This program is the result of the continuing demand and future requirement for a high data rate 60-G...
A new amplifier architecture was developed during this contract that is superior to any other solid ...
Described are the characterization and testing of a 20 W solid state amplifier operating in the Ka b...
The engineering development of a solid-state transmitter amplifier operating in the 20-GHz frequency...
Very promising preliminary experimental results have been obtained from GaAs IMPATT diodes at F-band...
Multikilowatt transmitter study for space communications satellites - amplifier design
Over the last ten years, NASA has undertaken an extensive program aimed at development of solid stat...
The small signal characteristics of DDR IMPATTs based on GaAs designed to operate at mm-wave window ...
This report details the development of a 20-W solid state amplifier operating near 30 GHz. The IMPAT...
A transmitter is considered that consists of GaAs IMPATT and Read diodes operating in a microstrip c...
International Telemetering Conference Proceedings / October 13-15, 1981 / Bahia Hotel, San Diego, Ca...