Add to ORKGThe sintering behavior of ultrafine SiC powder with average particle size of about 0.01-0.06 microns produced by a vapor phase reaction of the Me4Si-H2 system was studied at the temperature range of 1400-2050 deg. It was found that the homogeneous dispersion of C on SiC particles is important to remove the surface oxide layer effectively. B and C and inhibitive effect on SiC grain growth
International audienceOxygen impurity in SiC nanopowders induces grain growth and porous structure b...
In this paper, a simple method to synthesize silicon carbide (SiC) nanoribbons is presented. Silicon...
Silicon carbides have enjoyed both fundamental study and practical application since the early days ...
This study deals with the role of non-oxide sintering aids such as boron carbide (B4C) or – free bor...
Silicon carbide is used in the production of construction and temperature-resistant goods, capable o...
Starting from elemental powders, simultaneous synthesis and compaction of SiC were conducted at 3 GP...
AbstractSilicon carbide is used in the production of construction and temperature-resistant goods, c...
Extremely high quality ceramic powders have been synthesized from SiH4, NH3 and CH4 reactant gasse...
A method is described for producing a high density silicon carbide sintering substance which contain...
Superior SiC characteristics can be achieved through the use of ideal constituent powders and carefu...
The volatilization kinetics of single crystal α-SiC, polycrystalline β-SiC, and SiO_2 (cristobalite ...
This study explores a new route for the synthesis of SiC Ultra Fine Powder (UFP) directly from solid...
This study explores a new route for the synthesis of SiC Ultra Fine Powder (UFP) directly from solid...
The stable slurry was prepared by ball-milling with a certain proportion of silica fume as silicon s...
Abstract—The volatilization kinetics of single crystal -SiC, polycrystalline -SiC, and SiO2 (cristob...
International audienceOxygen impurity in SiC nanopowders induces grain growth and porous structure b...
In this paper, a simple method to synthesize silicon carbide (SiC) nanoribbons is presented. Silicon...
Silicon carbides have enjoyed both fundamental study and practical application since the early days ...
This study deals with the role of non-oxide sintering aids such as boron carbide (B4C) or – free bor...
Silicon carbide is used in the production of construction and temperature-resistant goods, capable o...
Starting from elemental powders, simultaneous synthesis and compaction of SiC were conducted at 3 GP...
AbstractSilicon carbide is used in the production of construction and temperature-resistant goods, c...
Extremely high quality ceramic powders have been synthesized from SiH4, NH3 and CH4 reactant gasse...
A method is described for producing a high density silicon carbide sintering substance which contain...
Superior SiC characteristics can be achieved through the use of ideal constituent powders and carefu...
The volatilization kinetics of single crystal α-SiC, polycrystalline β-SiC, and SiO_2 (cristobalite ...
This study explores a new route for the synthesis of SiC Ultra Fine Powder (UFP) directly from solid...
This study explores a new route for the synthesis of SiC Ultra Fine Powder (UFP) directly from solid...
The stable slurry was prepared by ball-milling with a certain proportion of silica fume as silicon s...
Abstract—The volatilization kinetics of single crystal -SiC, polycrystalline -SiC, and SiO2 (cristob...
International audienceOxygen impurity in SiC nanopowders induces grain growth and porous structure b...
In this paper, a simple method to synthesize silicon carbide (SiC) nanoribbons is presented. Silicon...
Silicon carbides have enjoyed both fundamental study and practical application since the early days ...