Add to ORKGSeveral Hg1-xCdxSe crystals of composition x = 0.2 were grown in a bridgman-type directional solidification furnace at varying translation rates. The influence of growth rate on both the longitudinal and radial compositional uniformity for the crystals was determined using density measurements and infrared transmission-edge mapping
As a solid solution semiconductor having, a large separation between liquidus and solidus, mercury c...
Two epitaxial growth experiments of Hg(1-x)Cd(x)Te layers on (100) CdTe substrates in closed ampoule...
A thermal analysis of Hg/Cd/Te solidification in a Bridgman cell is made using Continuum's VAST code...
Crystal growth of Hg sub 1-x Cd sub x Te and density measurements of ingot slices are discussed. Rad...
In order to achieve homogeneous semiconductor crystals through melt stabi-lization during the crysta...
Based on the thermophysical properties of Hg sub 1-x Cd sub x Te alloys, the reasons are discussed f...
Work associated with contract provided support for the approved flight experiment 'Crystal Growth of...
The defect structure of single crystals of Hg1-xCdxTe grown by the travelling heater method (THM) ha...
An improved understanding of the phenomena of importance to directional solidification is attempted ...
Bridgman-type crystal growth techniques are attractive methods for producing homogeneous, high-quali...
A Hg(0.84)Zn(0.16)Te alloy crystal was back-melted and partially resolidified during the first Unite...
Directional melting of binary systems, as encountered during seeding in melt growth, is analyzed for...
Crystal growth by the travelling heater method (THM) is reported using a source material preparation...
Hg sub 1-xZn sub xSe alloys of composition x=0.10 were grown in a Bridgman-Stockbarger growth furnac...
The accelerated crucible rotation technique (ACRT) has been applied to the THM growth of Hg1−xCdxTe ...
As a solid solution semiconductor having, a large separation between liquidus and solidus, mercury c...
Two epitaxial growth experiments of Hg(1-x)Cd(x)Te layers on (100) CdTe substrates in closed ampoule...
A thermal analysis of Hg/Cd/Te solidification in a Bridgman cell is made using Continuum's VAST code...
Crystal growth of Hg sub 1-x Cd sub x Te and density measurements of ingot slices are discussed. Rad...
In order to achieve homogeneous semiconductor crystals through melt stabi-lization during the crysta...
Based on the thermophysical properties of Hg sub 1-x Cd sub x Te alloys, the reasons are discussed f...
Work associated with contract provided support for the approved flight experiment 'Crystal Growth of...
The defect structure of single crystals of Hg1-xCdxTe grown by the travelling heater method (THM) ha...
An improved understanding of the phenomena of importance to directional solidification is attempted ...
Bridgman-type crystal growth techniques are attractive methods for producing homogeneous, high-quali...
A Hg(0.84)Zn(0.16)Te alloy crystal was back-melted and partially resolidified during the first Unite...
Directional melting of binary systems, as encountered during seeding in melt growth, is analyzed for...
Crystal growth by the travelling heater method (THM) is reported using a source material preparation...
Hg sub 1-xZn sub xSe alloys of composition x=0.10 were grown in a Bridgman-Stockbarger growth furnac...
The accelerated crucible rotation technique (ACRT) has been applied to the THM growth of Hg1−xCdxTe ...
As a solid solution semiconductor having, a large separation between liquidus and solidus, mercury c...
Two epitaxial growth experiments of Hg(1-x)Cd(x)Te layers on (100) CdTe substrates in closed ampoule...
A thermal analysis of Hg/Cd/Te solidification in a Bridgman cell is made using Continuum's VAST code...