A theoretical study of resonant tunneling in multilayered heterostructures is presented based on an exact solution of the Schroedinger equation under the application of a constant electric field. By use of the transfer matrix approach, the transmissivity of the structure is determined as a function of the incident electron energy. The approach presented is easily extended to many layer structures where it is more accurate than other existing transfer matrix or WKB models. The transmission resonances are compared to the bound state energies calculated for a finite square well under bias using either an asymmetric square well model or the exact solution of an infinite square well under the application of an electric field. The results show go...
Some of the recent developments in the field of semiconductor devices are discussed. Two trends are ...
In this study we examine the effect of superlattice (SL) structures as electron injectors to asymmet...
Some of the recent developments in the field of semiconductor devices are discussed. Two trends are ...
The objective of the work presented in this thesis is to study quantum transport and optical propert...
The objective of the work presented in this thesis is to study quantum transport and optical propert...
A theoretical study of multi-quantum-well semiconductor heterostructures under applied electric fiel...
International audienceIn 1970, Esaki and Tsu invented the concept of semiconductor superlattices for...
This thesis deals with the electronic properties of a semiconductor superlattice and with electronic...
A system of interdigital gates is used to create a periodic potential profile in a multilayer hetero...
A theoretical resonant-tunnelling approach is used in a detailed study of the electronic and transmi...
A model describing the subband structures and tunneling characteristics of superlattices is presente...
Chapter 1 contains a summary of the research into superlattices from 1970 when they were initially p...
Some of the recent developments in the field of semiconductor devices are discussed. Two trends are ...
Some of the recent developments in the field of semiconductor devices are discussed. Two trends are ...
Some of the recent developments in the field of semiconductor devices are discussed. Two trends are ...
Some of the recent developments in the field of semiconductor devices are discussed. Two trends are ...
In this study we examine the effect of superlattice (SL) structures as electron injectors to asymmet...
Some of the recent developments in the field of semiconductor devices are discussed. Two trends are ...
The objective of the work presented in this thesis is to study quantum transport and optical propert...
The objective of the work presented in this thesis is to study quantum transport and optical propert...
A theoretical study of multi-quantum-well semiconductor heterostructures under applied electric fiel...
International audienceIn 1970, Esaki and Tsu invented the concept of semiconductor superlattices for...
This thesis deals with the electronic properties of a semiconductor superlattice and with electronic...
A system of interdigital gates is used to create a periodic potential profile in a multilayer hetero...
A theoretical resonant-tunnelling approach is used in a detailed study of the electronic and transmi...
A model describing the subband structures and tunneling characteristics of superlattices is presente...
Chapter 1 contains a summary of the research into superlattices from 1970 when they were initially p...
Some of the recent developments in the field of semiconductor devices are discussed. Two trends are ...
Some of the recent developments in the field of semiconductor devices are discussed. Two trends are ...
Some of the recent developments in the field of semiconductor devices are discussed. Two trends are ...
Some of the recent developments in the field of semiconductor devices are discussed. Two trends are ...
In this study we examine the effect of superlattice (SL) structures as electron injectors to asymmet...
Some of the recent developments in the field of semiconductor devices are discussed. Two trends are ...