P/N InP homojunction solar cells by LPE and MOCVD techniques

P/N InP homojunction solar cells have been prepared by using both liquid phase epitaxy (LPE) and metallorganic chemical vapor deposition (MOCVD) growth techniques. A heavily doped p-In sub 0.53Ga sub 0.47As contacting layer was incorporated into the cell structure to improve the fill factor and to eliminate surface spiking at the front surface. The best conversion efficiencies (total area) obtained under AM 1 illumination are 14.2 percent for a LPE cell and 15.4 percent for a MOCVD cell