Directions for further development of GaAs/CuInSe2 thin film tandem cells

Multijunction thin film solar cells utilizing GaAs and CuInSe2 as semiconductor absorbers are rapidly developing, becoming a viable technology for space power systems with an unparalleled combination of high efficiency, low mass, and high radiation tolerance. The prospect for evolutionary improvement of this type of cell towards efficiency of approximately equals 30 percent and specific power greater than 1 kW/kg while retaining the attribute of high radiation tolerance are good. Limitations of the present configuration and possible avenues for circumventing these problems are presented