Work is presented on heterojunction solar cells which were studied under the NASA/Arizona State University intern program. The heterojunction solar cells were fabricated by the liquid phase epitaxy method. The basic conversion efficiency was measured at 5 percent. It was determined that a thicker epilayer is needed, and that the density of recombination center should be reduced to give a smaller saturation current and hence a larger open-circuit voltage
Their excellent radiation resistance and conversion efficiencies greater than 20 percent, measured u...
[[abstract]]Good quality Al0.28Ga0.72As0.62P0.38 layers lattice matched to GaAs0.61P0.39 epitaxial s...
High-efficiency, thin-film InP solar cells grown heteroepitaxially on GaAs and Si single-crystal bul...
P/N InP homojunction solar cells have been prepared by using both liquid phase epitaxy (LPE) and met...
In addition to the existing materials growth laboratory, the photolithographic facility and the devi...
N/P InP homojunction solar cells with an In sub 0.53 Ga sub 0.47 As contacting layer were fabricated...
The characteristics of InP cells processed from thin layers of InP heteroepitaxially grown on GaAs, ...
The development, fabrication, and failure modes of AlxGa(1-x)As-GaAs heteroface solar cells are desc...
The commercial application of Indium Phosphide solar cells in practical space missions is crucially ...
Recent research efforts representing new directions in InP solar cell research are reviewed. These i...
The efficiency of indium phosphide solar cells is limited by high values of surface recombination. T...
Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a...
The InGaAsN/GaAs heterostructures proposed in 1996 by Kondow et al. have been successfully used in t...
The InGaAsN/GaAs heterostructures proposed in 1996 by Kondow et al. have been successfully used in t...
Metallorganic chemical-vapor-deposited heteroepitaxial indium phosphide (InP) solar cell experimenta...
Their excellent radiation resistance and conversion efficiencies greater than 20 percent, measured u...
[[abstract]]Good quality Al0.28Ga0.72As0.62P0.38 layers lattice matched to GaAs0.61P0.39 epitaxial s...
High-efficiency, thin-film InP solar cells grown heteroepitaxially on GaAs and Si single-crystal bul...
P/N InP homojunction solar cells have been prepared by using both liquid phase epitaxy (LPE) and met...
In addition to the existing materials growth laboratory, the photolithographic facility and the devi...
N/P InP homojunction solar cells with an In sub 0.53 Ga sub 0.47 As contacting layer were fabricated...
The characteristics of InP cells processed from thin layers of InP heteroepitaxially grown on GaAs, ...
The development, fabrication, and failure modes of AlxGa(1-x)As-GaAs heteroface solar cells are desc...
The commercial application of Indium Phosphide solar cells in practical space missions is crucially ...
Recent research efforts representing new directions in InP solar cell research are reviewed. These i...
The efficiency of indium phosphide solar cells is limited by high values of surface recombination. T...
Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a...
The InGaAsN/GaAs heterostructures proposed in 1996 by Kondow et al. have been successfully used in t...
The InGaAsN/GaAs heterostructures proposed in 1996 by Kondow et al. have been successfully used in t...
Metallorganic chemical-vapor-deposited heteroepitaxial indium phosphide (InP) solar cell experimenta...
Their excellent radiation resistance and conversion efficiencies greater than 20 percent, measured u...
[[abstract]]Good quality Al0.28Ga0.72As0.62P0.38 layers lattice matched to GaAs0.61P0.39 epitaxial s...
High-efficiency, thin-film InP solar cells grown heteroepitaxially on GaAs and Si single-crystal bul...