Researchers investigate the heterojunction internal photoemission (HIP) approach that potentially offers long wavelength infrared (LWIR) photovoltaic detector performance (single pixel) that is competitive with the best of other approaches being considered. Most significantly, this approach offers a relatively simple device technology that promises producible and uniform FPA's. Researchers emphasize an exciting process based on intervalence band absorption. They investigate both III-V and Si-based heterojunctions grown by molecular beam epitaxy (MBE) in which the barrier can be tailored to the desired cutoff wavelength. In addition, MBE allows one to optimize the device structure with precise control of doping profiles and layer thicknesses...
We report a wavelength threshold extension, from the designed value of 3.1 to 8.9 μm, in a -type het...
p-GaAs/AlxGa1-xAs heterostructure-based extended-wavelength infrared photodetectors have been experi...
Researchers propose a novel semiconductor heterojunction photodetector which would have a very low d...
There is a major need for long-wavelength-infrared (LWIR) detector arrays in the range of 8 to 16 mi...
We report the incorporation of a long-wavelength photovoltaic response (up to 8μm) in a short-wavele...
For the infrared detection in the 3-5 μm range, p-GaAs/AlxGa1-xAs heterojunction is an attractive ma...
The performance requirements that today's advanced Long Wavelength Infrared (LWIR) focal plane array...
AbstractUsing sophisticated epitaxial growth techniques, it is possible to fabricate new forms of ac...
The wavelength threshold of a semiconductor photodetector is determined by the conventional rule λ ...
In this work, homojunction interfacial workfunction internal photoemission (HIWIP) detectors based o...
AbstractThe authors report on the fabrication of a silicon/organic heterojunction based IR photodete...
The theory of internal photoemission in semiconductor heterojunctions has been investigated and the ...
Interband cascade (IC) devices are a family of quantum engineered heterostructures that include: IC ...
The design, fabrication, and characterization of heterojunction photodiodes for room temperature ope...
The extension of the optical response of narrow band gap III-V semiconductors into the long waveleng...
We report a wavelength threshold extension, from the designed value of 3.1 to 8.9 μm, in a -type het...
p-GaAs/AlxGa1-xAs heterostructure-based extended-wavelength infrared photodetectors have been experi...
Researchers propose a novel semiconductor heterojunction photodetector which would have a very low d...
There is a major need for long-wavelength-infrared (LWIR) detector arrays in the range of 8 to 16 mi...
We report the incorporation of a long-wavelength photovoltaic response (up to 8μm) in a short-wavele...
For the infrared detection in the 3-5 μm range, p-GaAs/AlxGa1-xAs heterojunction is an attractive ma...
The performance requirements that today's advanced Long Wavelength Infrared (LWIR) focal plane array...
AbstractUsing sophisticated epitaxial growth techniques, it is possible to fabricate new forms of ac...
The wavelength threshold of a semiconductor photodetector is determined by the conventional rule λ ...
In this work, homojunction interfacial workfunction internal photoemission (HIWIP) detectors based o...
AbstractThe authors report on the fabrication of a silicon/organic heterojunction based IR photodete...
The theory of internal photoemission in semiconductor heterojunctions has been investigated and the ...
Interband cascade (IC) devices are a family of quantum engineered heterostructures that include: IC ...
The design, fabrication, and characterization of heterojunction photodiodes for room temperature ope...
The extension of the optical response of narrow band gap III-V semiconductors into the long waveleng...
We report a wavelength threshold extension, from the designed value of 3.1 to 8.9 μm, in a -type het...
p-GaAs/AlxGa1-xAs heterostructure-based extended-wavelength infrared photodetectors have been experi...
Researchers propose a novel semiconductor heterojunction photodetector which would have a very low d...