Add to ORKGIn(x)Ga(1-x)As based MODFET (modulation doped field effect transistor) material was grown by molecular beam epitaxy on semi-insulating InP substrates. Several structures were made, including lattice matched and strained layer InGaAs. All structures also included several layers of In(0.52)Al(0.48)As. Variable angle spectroscopic ellipsometry was used to characterize the structures. The experimental data, together with the calibration function for the constituent materials, were analyzed to yield the thickness of all the layers of the MODFET structure. Results of the ellipsometrically determined thicknesses compare very well with the reflection high energy electron diffraction in situ thickness measurements
Reflection high‐energy electron diffraction oscillations have been studied during the growth of stra...
In this chapter, our works on the developments of wavelength-extended InGaAs photodetectors with cut...
The molecular‐beam‐epitaxial growth of InxGa1−xAs on GaAs or AlyGa1−yAs leads to a variation of In c...
Variable angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within ...
Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within ...
The dielectric function of a thick layer of In0.52Al0.48As lattice matched to InP was measured by va...
Advances in materials, devices, and instrumentation made under this grant began with ex-situ null el...
The work described in this thesis is a result of a detailed investigation of the characteristics of ...
129 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.Described in this thesis are ...
In normal molecular beam epitaxy (MBE), the presence of strain makes the growth to favor a three dim...
Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in t...
Copyright 1998 American Vacuum Society. Link to the original site http://scitation.aip.org/content/a...
The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have bee...
Manganese was used as the dopant for p-type InGaAs layers grown on semi-insulating (Fe-doped) and n-...
Room temperature Photoreflectance and Spectroscopic Ellipsometry were used to study the valence band...
Reflection high‐energy electron diffraction oscillations have been studied during the growth of stra...
In this chapter, our works on the developments of wavelength-extended InGaAs photodetectors with cut...
The molecular‐beam‐epitaxial growth of InxGa1−xAs on GaAs or AlyGa1−yAs leads to a variation of In c...
Variable angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within ...
Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within ...
The dielectric function of a thick layer of In0.52Al0.48As lattice matched to InP was measured by va...
Advances in materials, devices, and instrumentation made under this grant began with ex-situ null el...
The work described in this thesis is a result of a detailed investigation of the characteristics of ...
129 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.Described in this thesis are ...
In normal molecular beam epitaxy (MBE), the presence of strain makes the growth to favor a three dim...
Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in t...
Copyright 1998 American Vacuum Society. Link to the original site http://scitation.aip.org/content/a...
The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have bee...
Manganese was used as the dopant for p-type InGaAs layers grown on semi-insulating (Fe-doped) and n-...
Room temperature Photoreflectance and Spectroscopic Ellipsometry were used to study the valence band...
Reflection high‐energy electron diffraction oscillations have been studied during the growth of stra...
In this chapter, our works on the developments of wavelength-extended InGaAs photodetectors with cut...
The molecular‐beam‐epitaxial growth of InxGa1−xAs on GaAs or AlyGa1−yAs leads to a variation of In c...