A method for constructing upper bound estimates for device single event upset (SEU) rates is presented. A directional Heinrich flux, as a function of direction, must be known. A computer code, included, converts the directional Heinrich flux into an 'effective flux'. The effective flux provides a simple way to estimate upper bound SEU rates for devices with a known normal incident cross section versus LET curve
Power semiconductor devices are susceptible to catastrophic failures when exposed to energetic parti...
This viewgraph presentation reviews the simulation of Single Event Upset (SEU) cross sections using ...
Single event rates (SER) can include contributions from low-energy particles such that the linear en...
We propose a method for the application of single event upset (SEU) data towards the analysis of com...
One of the important effects of the space environment on the satellites and spacecrafts is the singl...
This paper presents an analysis of the sensitivity of single event upset (SEU) rate predictions to c...
Single event upset (SEU) analysis of complex systems is challenging. Currently, system SEU analysis ...
Radiation encountered in space environments can be damaging to microelectronics and potentially caus...
We propose a method for the application of single event upset (SEU) data towards the analysis of com...
We present a new method to estimate Single Event Upsets (SEU) in a hadron accelerator environment, w...
Single-event gate rupture (SEGR) continues to be a key failure mode in power MOSFETs. (1) SEGR is co...
When an energetic particle (kinetic energy 0.5 MeV) originating from a radioactive decay or a cosmi...
Single event upset (SEU) and latchup vulnerabilities were determined for a number of parts of intere...
Until recently, the effects of radiation environment on on-board electronics on launchers and aircra...
International audienceThis work presents an approach to predict the error rates due to Single Event ...
Power semiconductor devices are susceptible to catastrophic failures when exposed to energetic parti...
This viewgraph presentation reviews the simulation of Single Event Upset (SEU) cross sections using ...
Single event rates (SER) can include contributions from low-energy particles such that the linear en...
We propose a method for the application of single event upset (SEU) data towards the analysis of com...
One of the important effects of the space environment on the satellites and spacecrafts is the singl...
This paper presents an analysis of the sensitivity of single event upset (SEU) rate predictions to c...
Single event upset (SEU) analysis of complex systems is challenging. Currently, system SEU analysis ...
Radiation encountered in space environments can be damaging to microelectronics and potentially caus...
We propose a method for the application of single event upset (SEU) data towards the analysis of com...
We present a new method to estimate Single Event Upsets (SEU) in a hadron accelerator environment, w...
Single-event gate rupture (SEGR) continues to be a key failure mode in power MOSFETs. (1) SEGR is co...
When an energetic particle (kinetic energy 0.5 MeV) originating from a radioactive decay or a cosmi...
Single event upset (SEU) and latchup vulnerabilities were determined for a number of parts of intere...
Until recently, the effects of radiation environment on on-board electronics on launchers and aircra...
International audienceThis work presents an approach to predict the error rates due to Single Event ...
Power semiconductor devices are susceptible to catastrophic failures when exposed to energetic parti...
This viewgraph presentation reviews the simulation of Single Event Upset (SEU) cross sections using ...
Single event rates (SER) can include contributions from low-energy particles such that the linear en...