Azulene-doped naphthalene was directionally solidified during the vertical Bridgman-Stockbarger technique. Doping homogeneity and convection were determined as a function of the temperature profile in the furnace and the freezing rate. Convection velocities were two orders of magnitude lower when the temperature increased with height. Rarely was the convection pattern axisymmetric, even though the temperature varied less than 0.1 K around the circumference of the growth ampoule. Correspondingly the cross sectional variation in azulene concentration tended to be asymmetric, especially when the temperature increased with height. This cross sectional variation changed dramatically along the ingot, reflecting changes in convection presumably du...
The research carried out under NAG8-913, 'Characterization of Convection Related Defects in II-VI Co...
Macrosegregation produced during vertical Bridgeman directional solidification of Csl-1 wt. pct. Tll...
In order to achieve homogeneous semiconductor crystals through melt stabi-lization during the crysta...
The long range goal is to develop an improved understanding of phenomena of importance to directiona...
Within the framework of the proposed research, emphasis was placed on application of magnetic fields...
The roles of natural convection in the melt and the shape of the melt/solid interface on radial dopa...
NASA has been interested in experimental ground based study to investigate the fundamental processes...
The motivation behind this study derives from the demand within industry for bimetallic crystals of ...
Both the experimental observation and numerical simulation indicate that the Bridgman growth of PbSn...
The heat transfer coefficient between a molten charge and its surroundings in a Bridgman furnace was...
We analytically study the influence of convection caused by horizontal heat transfer through the sid...
Accurate temperature measurement of the furnace environment is very important in both the science an...
In this work we study heat and mass transport, fluid motion, and solid/liquid phase change in the pr...
Bridgman-type crystal growth techniques are attractive methods for producing homogeneous, high-quali...
Based on the thermophysical properties of Hg sub 1-x Cd sub x Te alloys, the reasons are discussed f...
The research carried out under NAG8-913, 'Characterization of Convection Related Defects in II-VI Co...
Macrosegregation produced during vertical Bridgeman directional solidification of Csl-1 wt. pct. Tll...
In order to achieve homogeneous semiconductor crystals through melt stabi-lization during the crysta...
The long range goal is to develop an improved understanding of phenomena of importance to directiona...
Within the framework of the proposed research, emphasis was placed on application of magnetic fields...
The roles of natural convection in the melt and the shape of the melt/solid interface on radial dopa...
NASA has been interested in experimental ground based study to investigate the fundamental processes...
The motivation behind this study derives from the demand within industry for bimetallic crystals of ...
Both the experimental observation and numerical simulation indicate that the Bridgman growth of PbSn...
The heat transfer coefficient between a molten charge and its surroundings in a Bridgman furnace was...
We analytically study the influence of convection caused by horizontal heat transfer through the sid...
Accurate temperature measurement of the furnace environment is very important in both the science an...
In this work we study heat and mass transport, fluid motion, and solid/liquid phase change in the pr...
Bridgman-type crystal growth techniques are attractive methods for producing homogeneous, high-quali...
Based on the thermophysical properties of Hg sub 1-x Cd sub x Te alloys, the reasons are discussed f...
The research carried out under NAG8-913, 'Characterization of Convection Related Defects in II-VI Co...
Macrosegregation produced during vertical Bridgeman directional solidification of Csl-1 wt. pct. Tll...
In order to achieve homogeneous semiconductor crystals through melt stabi-lization during the crysta...