This report describes the design, fabrication, and testing of the Single-Event Upset/Total Dose (SEU/TD) Radiation Monitor chip. The Radiation Monitor is scheduled to fly on the Mid-Course Space Experiment Satellite (MSX). The Radiation Monitor chip consists of a custom-designed 4-bit SRAM for heavy ion detection and three MOSFET's for monitoring total dose. In addition the Radiation Monitor chip was tested along with three diagnostic chips: the processor monitor and the reliability and fault chips. These chips revealed the quality of the CMOS fabrication process. The SEU/TD Radiation Monitor chip had an initial functional yield of 94.6 percent. Forty-three (43) SEU SRAM's and 14 Total Dose MOSFET's passed the hermeticity and final electric...
This thesis mainly describes a total dose measurement technique using radiation-sensitive field effe...
This paper presents an investigation into total ionizing dose (TID) effects on I-V and noise charact...
The purpose of this test is to determine the heavy ion-induced single-event effect (SEE) susceptibil...
This report describes the development of two radiation monitors (RADMON's) for use in detecting tota...
Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology ...
Since the summer of 1988, radiation effects, in particular single event upset (SEU) phenomena, have ...
With the evolution of modern Complementary Metal-Oxide-Semiconductor (CMOS) technology, transistor f...
We present the results of single event effects (SEE) testing and analysis investigating the effects ...
We present the results of single event effects (SEE) testing and analysis investigating the effects ...
This is a Total Ionizing Dose (TID) test report for the Fujitsu Semiconductor MB85AS4MT Resistive Ra...
Today, with the rise of the private sector in space exploration, space missions are becoming more fr...
The radiation tolerance of a commercial 0.13 mu m CMOS technology is investigated. Total ionizing do...
We present the results of single event effects (SEE) testing and analysis investigating the effects ...
Microprocessor, Graphics Processing Units (GPUs) and DDRx memory devices have emerged as promising n...
The development of modern electronics has far outstripped the inventory of components for which radi...
This thesis mainly describes a total dose measurement technique using radiation-sensitive field effe...
This paper presents an investigation into total ionizing dose (TID) effects on I-V and noise charact...
The purpose of this test is to determine the heavy ion-induced single-event effect (SEE) susceptibil...
This report describes the development of two radiation monitors (RADMON's) for use in detecting tota...
Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology ...
Since the summer of 1988, radiation effects, in particular single event upset (SEU) phenomena, have ...
With the evolution of modern Complementary Metal-Oxide-Semiconductor (CMOS) technology, transistor f...
We present the results of single event effects (SEE) testing and analysis investigating the effects ...
We present the results of single event effects (SEE) testing and analysis investigating the effects ...
This is a Total Ionizing Dose (TID) test report for the Fujitsu Semiconductor MB85AS4MT Resistive Ra...
Today, with the rise of the private sector in space exploration, space missions are becoming more fr...
The radiation tolerance of a commercial 0.13 mu m CMOS technology is investigated. Total ionizing do...
We present the results of single event effects (SEE) testing and analysis investigating the effects ...
Microprocessor, Graphics Processing Units (GPUs) and DDRx memory devices have emerged as promising n...
The development of modern electronics has far outstripped the inventory of components for which radi...
This thesis mainly describes a total dose measurement technique using radiation-sensitive field effe...
This paper presents an investigation into total ionizing dose (TID) effects on I-V and noise charact...
The purpose of this test is to determine the heavy ion-induced single-event effect (SEE) susceptibil...