From I-V measurements on Single Barrier Varactors (SBV) at different temperatures we concluded that thermionic emission across the barrier of the actual device is mainly due to transport through the X band. The same structure was also modeled with a one-dimensional drift-diffusion model, including a 'boundary condition' for thermionic emission across the heterojunction interface. By including thermionic field emission through the top of the triangular barrier of a biased diode and the effect of a non-abrupt interface at the heterojunction, we obtained good agreement between the modeled and measured I-V characteristics
The barrier height and ideality factor of Au/n-GaAs Schottky diodes grown by metal-organic vapor-pha...
Gate leakage currents in high performance InSb/AlInSb quantum well field effect transistors are pres...
SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes f...
We present a numerical model in which the thermionic and tunneling mechanisms across an abrupt heter...
This paper considers the transport of conduction band electrons as a result of tunneling through a t...
International audienceWe investigate electron transport in asymmetric double-barrier (Al, Ga)As/GaAs...
A one-dimensional self-consistent boundary-condition numerical model was developed which can account...
The current-voltage characteristics of Au=low doped n-GaAs Schottky diodes were determined at va...
Abstract-The thermionic emission current for electrons across the heterointerface is classically mod...
We report an extensive investigation of semiconductor band-structure effects in single-barrier A...
I-V-T data is routinely used to determine the conduction band discontinuity in heterojunction struc...
The forward current of Schottky barriers on n-type GaAs is investigated as a function of electron co...
A study on parameters of the Sn/n-GaAs Schottky barrier diode (SBD) fabricated on an n-type GaAs sub...
A study on thermally activated currents across the bulk and multiquantum barrier (MQB) AlxGa1-xInP/G...
Journal ArticleUtilizing three-terminal tunnel emission of ballistic electrons and holes in a planar...
The barrier height and ideality factor of Au/n-GaAs Schottky diodes grown by metal-organic vapor-pha...
Gate leakage currents in high performance InSb/AlInSb quantum well field effect transistors are pres...
SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes f...
We present a numerical model in which the thermionic and tunneling mechanisms across an abrupt heter...
This paper considers the transport of conduction band electrons as a result of tunneling through a t...
International audienceWe investigate electron transport in asymmetric double-barrier (Al, Ga)As/GaAs...
A one-dimensional self-consistent boundary-condition numerical model was developed which can account...
The current-voltage characteristics of Au=low doped n-GaAs Schottky diodes were determined at va...
Abstract-The thermionic emission current for electrons across the heterointerface is classically mod...
We report an extensive investigation of semiconductor band-structure effects in single-barrier A...
I-V-T data is routinely used to determine the conduction band discontinuity in heterojunction struc...
The forward current of Schottky barriers on n-type GaAs is investigated as a function of electron co...
A study on parameters of the Sn/n-GaAs Schottky barrier diode (SBD) fabricated on an n-type GaAs sub...
A study on thermally activated currents across the bulk and multiquantum barrier (MQB) AlxGa1-xInP/G...
Journal ArticleUtilizing three-terminal tunnel emission of ballistic electrons and holes in a planar...
The barrier height and ideality factor of Au/n-GaAs Schottky diodes grown by metal-organic vapor-pha...
Gate leakage currents in high performance InSb/AlInSb quantum well field effect transistors are pres...
SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes f...