In our previous works, using a graphical tool, yield factor histograms, we studied the yield sensitivity of High Electron Mobility Transistors (HEMT) and HEMT circuit performance with the variation of process parameters. This work studies the scaling effects of process parameters on yield sensitivity of HEMT digital circuits. The results from two HEMT circuits are presented
One of the main objectives of modern Microelectronics is the fabrication of devices with increased ...
High Electron Mobility Transistors (HEMTs) are crucially important devices in microwave circuit appl...
This study carried out a detail analysis of the perform anc e of HEMT device with various numb ers ...
Analytical and numerical models are developed for the microwave small-signal performance, such as tr...
In this brief, the impact of parasitic resistance and capacitance on InGaAs HEMT digital logic circu...
This paper aims to enhance the performance of the High Electron Mobility Transistor (HEMT) according...
Thesis (Ph.D.)-University of Natal, Durban, 1986.The last six years has seen the emergence and rapid...
The scaling behavior of strained Al0.50In0.50As/In0.53Ga0.47As/Al0.50In0.50As m-HEMT is investigated...
In this paper the effect of the Gate shape on the operation of HEMTS is evaluated via simulations an...
This letter aims at investigating the impact of the gate width on the microwave field effect transis...
A study of the parasitic effects detrinental to the operation of two-dimensional electron gas field ...
Digital Performance analysis of high electron devices used in microwave communication systems is cru...
The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of o...
In this paper, we present the dependence of source resistance sensibility on the gate bias effect in...
Se han estudiado las características estáticas y dinámicas de HEMTs de doblre puerta (DG-HEMTs) por ...
One of the main objectives of modern Microelectronics is the fabrication of devices with increased ...
High Electron Mobility Transistors (HEMTs) are crucially important devices in microwave circuit appl...
This study carried out a detail analysis of the perform anc e of HEMT device with various numb ers ...
Analytical and numerical models are developed for the microwave small-signal performance, such as tr...
In this brief, the impact of parasitic resistance and capacitance on InGaAs HEMT digital logic circu...
This paper aims to enhance the performance of the High Electron Mobility Transistor (HEMT) according...
Thesis (Ph.D.)-University of Natal, Durban, 1986.The last six years has seen the emergence and rapid...
The scaling behavior of strained Al0.50In0.50As/In0.53Ga0.47As/Al0.50In0.50As m-HEMT is investigated...
In this paper the effect of the Gate shape on the operation of HEMTS is evaluated via simulations an...
This letter aims at investigating the impact of the gate width on the microwave field effect transis...
A study of the parasitic effects detrinental to the operation of two-dimensional electron gas field ...
Digital Performance analysis of high electron devices used in microwave communication systems is cru...
The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of o...
In this paper, we present the dependence of source resistance sensibility on the gate bias effect in...
Se han estudiado las características estáticas y dinámicas de HEMTs de doblre puerta (DG-HEMTs) por ...
One of the main objectives of modern Microelectronics is the fabrication of devices with increased ...
High Electron Mobility Transistors (HEMTs) are crucially important devices in microwave circuit appl...
This study carried out a detail analysis of the perform anc e of HEMT device with various numb ers ...