En este trabajo calculamos la energía de enlace del estado base de excitones ligeros y pesados confinados en puntos cuánticos esféricos de GaAs rodeados de Ga1-xAlxAs bajo presión hidrostática usando coordenadas esféricas para los ligeros y el sistema de coordenadas de Hylleraas para los pesados, con la aproximación de masa efectiva, el método variacional y una concentración de Aluminio de x=0.3. También se determino la energía de enlace del estado base de excitones confinados en superredes de nanohilos cilíndricos de GaAs con barreras de Ga1-xAlxAs con una capa externa de Ga1-yAlyAs donde la concentración y era mayor que la concentración interna x. Para el caso de la superred se empleo el método variacional de Schrödinger. La presión hidro...
Este trabalho dedica-se ao estudo das propriedades eletrÃnicas de pontos quÃnticos semicondutores co...
In this work we make a predictive study on the binding energy of the ground state for hydrogenic don...
Bu tez çalışmasında antisimetrik hapsedici potansiyele sahip GaAs=Alxl;rGa1??xl;rAs kuantum kuyusu v...
ABSTARCT: The variational procedure, in the effective-mass and parabolic-band approximations, is use...
The properties of excitons formed in spherical quantum dots are studied using the k⋅p method within ...
The effects of hydrostatic pressure and strong built-in electric field on the donor bound exciton st...
By using a variational procedure within the effective mass approximation, we calculated the 2p state...
Using the effective mass and parabolic band approximations and a variational procedure we have calcu...
The variational procedure, in the effective-mass and parabolic-band approximations, is used in order...
The use of low dimensional structures is a key technological element in the creation of new quantum ...
Hemos estudiado los estados de excitación de orificios pesados en GaSb – GaInAsSb – GaSb tipo-I Pu...
Neste trabalho são calculados os estados fundamental e primeiro excitado do elétron em redes uni-dim...
Considering the hydrostatic pressure, the strong built-in electric field as well as the three-dimens...
ABSTRACT: Using a variational procedure for a hydrogenic donor-impurity we have investigated the inf...
We have studied the quantum confinement, applied hydrostatic pressure, and temperature dependence of...
Este trabalho dedica-se ao estudo das propriedades eletrÃnicas de pontos quÃnticos semicondutores co...
In this work we make a predictive study on the binding energy of the ground state for hydrogenic don...
Bu tez çalışmasında antisimetrik hapsedici potansiyele sahip GaAs=Alxl;rGa1??xl;rAs kuantum kuyusu v...
ABSTARCT: The variational procedure, in the effective-mass and parabolic-band approximations, is use...
The properties of excitons formed in spherical quantum dots are studied using the k⋅p method within ...
The effects of hydrostatic pressure and strong built-in electric field on the donor bound exciton st...
By using a variational procedure within the effective mass approximation, we calculated the 2p state...
Using the effective mass and parabolic band approximations and a variational procedure we have calcu...
The variational procedure, in the effective-mass and parabolic-band approximations, is used in order...
The use of low dimensional structures is a key technological element in the creation of new quantum ...
Hemos estudiado los estados de excitación de orificios pesados en GaSb – GaInAsSb – GaSb tipo-I Pu...
Neste trabalho são calculados os estados fundamental e primeiro excitado do elétron em redes uni-dim...
Considering the hydrostatic pressure, the strong built-in electric field as well as the three-dimens...
ABSTRACT: Using a variational procedure for a hydrogenic donor-impurity we have investigated the inf...
We have studied the quantum confinement, applied hydrostatic pressure, and temperature dependence of...
Este trabalho dedica-se ao estudo das propriedades eletrÃnicas de pontos quÃnticos semicondutores co...
In this work we make a predictive study on the binding energy of the ground state for hydrogenic don...
Bu tez çalışmasında antisimetrik hapsedici potansiyele sahip GaAs=Alxl;rGa1??xl;rAs kuantum kuyusu v...