Add to ORKGThe GaInP2/InGaAs/Ge triple junction device lattice matched to germanium has achieved the highest power conversion efficiency and the most commercial success for space applications [1]. What are the practical performance limits of this technology? In this paper we will describe what we consider to be the practical performance limits of the lattice matched GaInP2/InGaAs/Ge triple junction cell. In addition, we discuss the options for next generation space cell performance
This paper presents the design parameters for a triple junction InGaP/GaAs/Ge space solar cell with...
This paper summarizes the state-of-the-art of the lattice matched GaInP/Ga(In)As/Ge triple-junction ...
We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-jun...
Based on recent cell improvements for space applications, multijunction cells apear to be ideal cand...
Results of improvements in Emcore’s large-area ( 26.6 cm2) triple-junction (3J) space solar cells a...
This paper discusses semiconductor device research paths under investigation with the aim of reachin...
We present results from a p-n junction device physics model for GaInP/GaAs/GaInAsP/GaInAs four junct...
Theoretical efficiency has been calculated for three-junction series connected solar cell using air ...
High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power ...
Development of a three solar cell stack can lead to practical efficiencies greater than 30 percent (...
Development of next generation high efficiency space monolithic multifunction solar cells will invol...
An approach for an all lattice-matched multijunction solar cell optimized design is presented with 5...
Progress towards achieving a high one-sun air mass 0 (AM0) efficiency in a monolithic dual junction ...
GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high...
A theoretical conversion efficiency of 36.4% at 1000 suns concentration has been determined by means...
This paper presents the design parameters for a triple junction InGaP/GaAs/Ge space solar cell with...
This paper summarizes the state-of-the-art of the lattice matched GaInP/Ga(In)As/Ge triple-junction ...
We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-jun...
Based on recent cell improvements for space applications, multijunction cells apear to be ideal cand...
Results of improvements in Emcore’s large-area ( 26.6 cm2) triple-junction (3J) space solar cells a...
This paper discusses semiconductor device research paths under investigation with the aim of reachin...
We present results from a p-n junction device physics model for GaInP/GaAs/GaInAsP/GaInAs four junct...
Theoretical efficiency has been calculated for three-junction series connected solar cell using air ...
High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power ...
Development of a three solar cell stack can lead to practical efficiencies greater than 30 percent (...
Development of next generation high efficiency space monolithic multifunction solar cells will invol...
An approach for an all lattice-matched multijunction solar cell optimized design is presented with 5...
Progress towards achieving a high one-sun air mass 0 (AM0) efficiency in a monolithic dual junction ...
GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high...
A theoretical conversion efficiency of 36.4% at 1000 suns concentration has been determined by means...
This paper presents the design parameters for a triple junction InGaP/GaAs/Ge space solar cell with...
This paper summarizes the state-of-the-art of the lattice matched GaInP/Ga(In)As/Ge triple-junction ...
We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-jun...