Thermally induced intercalation of noble metals into non-van der Waals ceramic compounds presents a method to produce a new class of layered materials. We recently demonstrated an exchange reaction of Au with A layers of MAX phase carbides with plentiful combinations of A and M elements. Here, we report the first substitution of Al with Au in a Ti2AlN MAX phase nitride at an elevated temperature without destroying the original layered structure. These results bolster the generalization of the Au intercalation for the A elements in MAX phases with diverse combinations of M, A, and X elements. Furthermore, we propose crucial factors to achieve the exchange reaction: there should be a chemical potential for the A element to dissolve in or reac...
The objectives of this work are the synthesis of coatings and thin films of Ti2AlN (Hägg phase or 21...
Due to the continuous miniaturization of microelectronic devices, robust deposition techniques are r...
The susceptibility of Ti2AlN and Ti4AlN3 to high-temperature thermal dissociation in a dynamic envir...
Thermally induced intercalation of noble metals into non-van der Waals ceramic compounds presents a ...
Incorporation of layers of noble metals in non-van der Waals layered materials may be used to form n...
Incorporation of layers of noble metals in non-van der Waals layered materials may be used to form n...
The large class of layered ceramics encompasses both van der Waals (vdW) and non-vdW solids. While i...
The large class of layered ceramics encompasses both van der Waals (vdW) and non-vdW solids. While i...
The large class of layered ceramics encompasses both van der Waals (vdW) and non-vdW solids. While i...
Reactive cathodic arc deposition was used to grow substoichiometric solid solution cubic c-(Ti1-xAlx...
Reactive cathodic arc deposition was used to grow substoichiometric solid solution cubic c-(Ti1-xAlx...
Reactive cathodic arc deposition was used to grow substoichiometric solid solution cubic c-(Ti1-xAlx...
Single-phase Ti2AlN thin films were obtained by annealing in vacuum of (Ti + Al)/AIN multilayers dep...
Single-phase Ti2AlN thin films were obtained by annealing in vacuum of (Ti + Al)/AIN multilayers dep...
Ti2AlC is a typical MAX (M: early transition metal, A: main group element, and X: carbon and/or nitr...
The objectives of this work are the synthesis of coatings and thin films of Ti2AlN (Hägg phase or 21...
Due to the continuous miniaturization of microelectronic devices, robust deposition techniques are r...
The susceptibility of Ti2AlN and Ti4AlN3 to high-temperature thermal dissociation in a dynamic envir...
Thermally induced intercalation of noble metals into non-van der Waals ceramic compounds presents a ...
Incorporation of layers of noble metals in non-van der Waals layered materials may be used to form n...
Incorporation of layers of noble metals in non-van der Waals layered materials may be used to form n...
The large class of layered ceramics encompasses both van der Waals (vdW) and non-vdW solids. While i...
The large class of layered ceramics encompasses both van der Waals (vdW) and non-vdW solids. While i...
The large class of layered ceramics encompasses both van der Waals (vdW) and non-vdW solids. While i...
Reactive cathodic arc deposition was used to grow substoichiometric solid solution cubic c-(Ti1-xAlx...
Reactive cathodic arc deposition was used to grow substoichiometric solid solution cubic c-(Ti1-xAlx...
Reactive cathodic arc deposition was used to grow substoichiometric solid solution cubic c-(Ti1-xAlx...
Single-phase Ti2AlN thin films were obtained by annealing in vacuum of (Ti + Al)/AIN multilayers dep...
Single-phase Ti2AlN thin films were obtained by annealing in vacuum of (Ti + Al)/AIN multilayers dep...
Ti2AlC is a typical MAX (M: early transition metal, A: main group element, and X: carbon and/or nitr...
The objectives of this work are the synthesis of coatings and thin films of Ti2AlN (Hägg phase or 21...
Due to the continuous miniaturization of microelectronic devices, robust deposition techniques are r...
The susceptibility of Ti2AlN and Ti4AlN3 to high-temperature thermal dissociation in a dynamic envir...