An investigation into the electrical properties of gallium phosphide before and after implantation with electrically active ions.

Slices of single crystal gallium phosphide were subjected to a number of methods of surface polishing and etching. These were evaluated and the most effective used to prepare samples for ion implantation. The electrical properties were investigated, before and after implantation, using Hall and Van de Pauw measurements and the capacitance-voltage, capacitance-time relationships for Schottky barriers, This enabled an explanation for the anamalous concentration of acceptor carriers in implanted, annealed material to be formulated. Unannealed, implanted specimens were investigated, and it was shown that a crude approximation to an MIS device could give an indication of the depth of implantation. The barrier height of tin on p-type gallium phosphide was established, experimentally, as 1.52+/-0.18eV