Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O

Atomic layer deposition of Hf-Si-O and Hf O2 using Hf Cl4, Si Cl4, and H2 O was studied. The growth per cycle and composition of Hf-Si-O films were analyzed as a function of the growth temperature, the pulse sequence, and the precursor doses. The growth of Hf-Si-O from Hf Cl4 Si Cl4 H2 O appeared to be determined not only by the -OH density but also by the -OH bonding mode. The Hf Cl4 Si Cl4 H2 O chemistry results in carbon-free films with low chlorine impurity content. The Hf-Si-O films of Hf-rich composition are meeting the leakage-current requirements for 45 nm technology node and below. © 2007 The Electrochemical Society