Chicane deceleration - An innovative energy contamination control technique in low energy ion implantation

High current beams suitable for USJ implantation were generated by 'Chicane Deceleration' involving an s-bend to block contaminants. Implanted wafers were analyzed with 200eV O2+ beams at 45° to resolve the sources of dopant profile variation in fine detail. Energy contamination is essentially eliminated, but for B+ channeling remains important. Unannealed Xj values from 5 to 7 nm are reported for different implant species. © 2006 American Institute of Physics