Add to ORKGWe investigated experimentally the temperature dependence of the threshold current in 1.3-μm AlGaInAs/InP MQW lasers, and found that compared with GaInAsP/InP devices the higher characteristic temperature was caused by a reduction of the non-radiative recombination current
The drive for low threshold and temperature-stable semiconductor lasers for telecommunication applic...
We examine the temperature dependence of threshold current in self-assembled quantum dot lasers focu...
The drive for low threshold and temperature-stable semiconductor lasers for telecommunication applic...
Measurements of the threshold current, Ith as a function of temperature, T were performed on 1.3 μm ...
Measurements of the threshold current, Ith as a function of temperature, T were performed on 1.3 μm ...
We investigated the threshold current, Ith, and its temperature dependence, To(Ith), for 1.3μm and 1...
We investigated the threshold current, Ith, and its temperature dependence, To(Ith), for 1.3μm and 1...
We have investigated the threshold current Ith and differential quantum efficiency as the function o...
The recombination processes in GaInNAs 1.3 μm lasers were analyzed theoretically and experimentally....
We report on the pressure dependence of the threshold current in 1.3 mum InGaAsP and 1.5 mum InGaAs ...
We report on the pressure dependence of the threshold current in 1.3 mum InGaAsP and 1.5 mum InGaAs ...
We report on the pressure dependence of the threshold current in 1.3 µm InGaAsP and 1.5 µm InGaAs ...
We report on the pressure dependence of the threshold current in 1.3 µm InGaAsP and 1.5 µm InGaAs ...
The thermal stabilities of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation we...
The thermal stabilities of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation we...
The drive for low threshold and temperature-stable semiconductor lasers for telecommunication applic...
We examine the temperature dependence of threshold current in self-assembled quantum dot lasers focu...
The drive for low threshold and temperature-stable semiconductor lasers for telecommunication applic...
Measurements of the threshold current, Ith as a function of temperature, T were performed on 1.3 μm ...
Measurements of the threshold current, Ith as a function of temperature, T were performed on 1.3 μm ...
We investigated the threshold current, Ith, and its temperature dependence, To(Ith), for 1.3μm and 1...
We investigated the threshold current, Ith, and its temperature dependence, To(Ith), for 1.3μm and 1...
We have investigated the threshold current Ith and differential quantum efficiency as the function o...
The recombination processes in GaInNAs 1.3 μm lasers were analyzed theoretically and experimentally....
We report on the pressure dependence of the threshold current in 1.3 mum InGaAsP and 1.5 mum InGaAs ...
We report on the pressure dependence of the threshold current in 1.3 mum InGaAsP and 1.5 mum InGaAs ...
We report on the pressure dependence of the threshold current in 1.3 µm InGaAsP and 1.5 µm InGaAs ...
We report on the pressure dependence of the threshold current in 1.3 µm InGaAsP and 1.5 µm InGaAs ...
The thermal stabilities of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation we...
The thermal stabilities of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation we...
The drive for low threshold and temperature-stable semiconductor lasers for telecommunication applic...
We examine the temperature dependence of threshold current in self-assembled quantum dot lasers focu...
The drive for low threshold and temperature-stable semiconductor lasers for telecommunication applic...