Determination of the influence of Auger recombination on the threshold current of 1.3 μm and 1.5 μm InGaAs(P) strained-layer lasers and its variation with temperature

Temperature and wavelength dependence of recombination processes in 1.5 mu m InGaAlAs/InP-based lasers

Sweeney, Stephen
McConville, D
Jin, SR
Ahmad, CN
Masse, NF
Bouyssou, RX
Adams, Alfred
Hanke, C

January 2004

The improved thermal stability of 1.5 mu m InGaAlAs- compared with InGaAs-based lasers is investigat...

Radiative and Non-Radiative Recombination in 1.3μm and 1.5μm Semiconductor Diode Lasers.

Sweeney, Stephen John.

January 1999

We investigated the threshold current, Ith, and its temperature dependence, To(Ith), for 1.3μm and 1...

Observation of reduced non-radiative recombination current in 1.3-μm AlGaInAs/InP multiple-quantum-well lasers

Higashi, T
Sweeney, SJ
Phillips, AF
Adams, AR
O'Reilly, EP
Uchida, T
Fujii, T

December 1998

We investigated experimentally the temperature dependence of the threshold current in 1.3-μm AlGaInA...

Determination of the influence of Auger recombination on the threshold current of 1.3 μm and 1.5 μm InGaAs(P) strained-layer lasers and its variation with temperature

Sweeney, SJ
Phillips, AF
Adams, AR
O'Reilly, EP
Thijs, PJA

January 2020

We investigated the influence of Auger recombination from 90 K to above room temperature and found i...

Radiative and Auger Recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs Quantum-well Lasers Measured Under High Pressure at Low and Room Temperatures

Jin, S R
Sweeney, S J
Ahmad, C N
Adams, A R
Murdin, B N

January 2004

We report on the pressure dependence of the threshold current in 1.3 mum InGaAsP and 1.5 mum InGaAs ...

Radiative and Auger Recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs Quantum-well Lasers Measured Under High Pressure at Low and Room Temperatures

Jin, S R
Sweeney, S J
Ahmad, C N
Adams, A R
Murdin, B N

July 2019

We report on the pressure dependence of the threshold current in 1.3 mum InGaAsP and 1.5 mum InGaAs ...

Radiative and Auger recombination in 1.3 µm InGaAsP and 1.5 µm InGaAs quantum-well lasers measured under high pressure at low and room temperatures

Jin, S. R.
Sweeney, S. J.
Ahmad, C. N.
Adams, A. R.
Murdin, B. N.

July 2019

We report on the pressure dependence of the threshold current in 1.3 µm InGaAsP and 1.5 µm InGaAs ...

Radiative and Auger recombination in 1.3 µm InGaAsP and 1.5 µm InGaAs quantum-well lasers measured under high pressure at low and room temperatures

Jin, S. R.
Sweeney, S. J.
Ahmad, C. N.
Adams, A. R.
Murdin, B. N.

July 2004

We report on the pressure dependence of the threshold current in 1.3 µm InGaAsP and 1.5 µm InGaAs ...

Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 µm

O'Brien, K.
Sweeney, S. J.
Adams, A. R.
Murdin, B. N
Salhi, A.
Rouillard, Y.
Joullié, A.

August 2006

The temperature dependence of the threshold current of InGaAsSb/AlGaAsSb compressively strained lase...

Recombination Processes in Midinfrared InGaAsSb Diode Lasers Emitting at 2.37 mu m

O'Brien, K
Sweeney, S J
Adams, A R
Murdin, B N
Salhi, A
Rouillard, Y
Joullie, A

July 2019

The temperature dependence of the threshold current of InGaAsSb/AlGaAsSb compressively strained lase...

Recombination Processes in Midinfrared InGaAsSb Diode Lasers Emitting at 2.37 mu m

O'Brien, K
Sweeney, S J
Adams, A R
Murdin, B N
Salhi, A
Rouillard, Y
Joullie, A

January 2006

The temperature dependence of the threshold current of InGaAsSb/AlGaAsSb compressively strained lase...

Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature

Masse, NF
Adams, AR
Sweeney, SJ

July 2019

The band gap dependencies of the threshold current and its radiative component are measured using hi...

Temperature dependence of the radiative and non-radiative currents in visible and near infra-red semiconductor lasers.

Phillips, Alistair F.

March 2018

We investigate loss mechanisms in 1.3mum lasers and in visible lasers operating between 630nm and 69...

Transition from radiative to nonradiative recombination in 1.3-μm and 1.5-μm InGaAs(P) multiple quantum well semiconductor diode lasers

Sweeney, SJ
Phillips, AF
Adams, AR
O'Reilly, EP
Silver, M
Thijs, PJA

January 2020

Measurements of the threshold current, Ith as a function of temperature, T were performed on 1.3 μm ...

Transition from radiative to nonradiative recombination in 1.3-μm and 1.5-μm InGaAs(P) multiple quantum well semiconductor diode lasers

Sweeney, SJ
Phillips, AF
Adams, AR
O'Reilly, EP
Silver, M
Thijs, PJA

January 1998

Measurements of the threshold current, Ith as a function of temperature, T were performed on 1.3 μm ...

Temperature and wavelength dependence of recombination processes in 1.5 mu m InGaAlAs/InP-based lasers

Sweeney, Stephen
McConville, D
Jin, SR
Ahmad, CN
Masse, NF
Bouyssou, RX
Adams, Alfred
Hanke, C

January 2004

The improved thermal stability of 1.5 mu m InGaAlAs- compared with InGaAs-based lasers is investigat...

Radiative and Non-Radiative Recombination in 1.3μm and 1.5μm Semiconductor Diode Lasers.

Sweeney, Stephen John.

January 1999

We investigated the threshold current, Ith, and its temperature dependence, To(Ith), for 1.3μm and 1...

Observation of reduced non-radiative recombination current in 1.3-μm AlGaInAs/InP multiple-quantum-well lasers

Higashi, T
Sweeney, SJ
Phillips, AF
Adams, AR
O'Reilly, EP
Uchida, T
Fujii, T

December 1998

We investigated experimentally the temperature dependence of the threshold current in 1.3-μm AlGaInA...

Determination of the influence of Auger recombination on the threshold current of 1.3 μm and 1.5 μm InGaAs(P) strained-layer lasers and its variation with temperature

Sweeney, SJ
Phillips, AF
Adams, AR
O'Reilly, EP
Thijs, PJA

January 2020

We investigated the influence of Auger recombination from 90 K to above room temperature and found i...

Radiative and Auger Recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs Quantum-well Lasers Measured Under High Pressure at Low and Room Temperatures

Jin, S R
Sweeney, S J
Ahmad, C N
Adams, A R
Murdin, B N

January 2004

We report on the pressure dependence of the threshold current in 1.3 mum InGaAsP and 1.5 mum InGaAs ...

Radiative and Auger Recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs Quantum-well Lasers Measured Under High Pressure at Low and Room Temperatures

Jin, S R
Sweeney, S J
Ahmad, C N
Adams, A R
Murdin, B N

July 2019

We report on the pressure dependence of the threshold current in 1.3 mum InGaAsP and 1.5 mum InGaAs ...

Radiative and Auger recombination in 1.3 µm InGaAsP and 1.5 µm InGaAs quantum-well lasers measured under high pressure at low and room temperatures

Jin, S. R.
Sweeney, S. J.
Ahmad, C. N.
Adams, A. R.
Murdin, B. N.

July 2019

We report on the pressure dependence of the threshold current in 1.3 µm InGaAsP and 1.5 µm InGaAs ...

Radiative and Auger recombination in 1.3 µm InGaAsP and 1.5 µm InGaAs quantum-well lasers measured under high pressure at low and room temperatures

Jin, S. R.
Sweeney, S. J.
Ahmad, C. N.
Adams, A. R.
Murdin, B. N.

July 2004

We report on the pressure dependence of the threshold current in 1.3 µm InGaAsP and 1.5 µm InGaAs ...

Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 µm

O'Brien, K.
Sweeney, S. J.
Adams, A. R.
Murdin, B. N
Salhi, A.
Rouillard, Y.
Joullié, A.

August 2006

The temperature dependence of the threshold current of InGaAsSb/AlGaAsSb compressively strained lase...

Recombination Processes in Midinfrared InGaAsSb Diode Lasers Emitting at 2.37 mu m

O'Brien, K
Sweeney, S J
Adams, A R
Murdin, B N
Salhi, A
Rouillard, Y
Joullie, A

July 2019

The temperature dependence of the threshold current of InGaAsSb/AlGaAsSb compressively strained lase...

Recombination Processes in Midinfrared InGaAsSb Diode Lasers Emitting at 2.37 mu m

O'Brien, K
Sweeney, S J
Adams, A R
Murdin, B N
Salhi, A
Rouillard, Y
Joullie, A

January 2006

The temperature dependence of the threshold current of InGaAsSb/AlGaAsSb compressively strained lase...

Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature

Masse, NF
Adams, AR
Sweeney, SJ

July 2019

The band gap dependencies of the threshold current and its radiative component are measured using hi...

Temperature dependence of the radiative and non-radiative currents in visible and near infra-red semiconductor lasers.

Phillips, Alistair F.

March 2018

We investigate loss mechanisms in 1.3mum lasers and in visible lasers operating between 630nm and 69...

Transition from radiative to nonradiative recombination in 1.3-μm and 1.5-μm InGaAs(P) multiple quantum well semiconductor diode lasers

Sweeney, SJ
Phillips, AF
Adams, AR
O'Reilly, EP
Silver, M
Thijs, PJA

January 2020

Measurements of the threshold current, Ith as a function of temperature, T were performed on 1.3 μm ...

Transition from radiative to nonradiative recombination in 1.3-μm and 1.5-μm InGaAs(P) multiple quantum well semiconductor diode lasers

Sweeney, SJ
Phillips, AF
Adams, AR
O'Reilly, EP
Silver, M
Thijs, PJA

January 1998

Measurements of the threshold current, Ith as a function of temperature, T were performed on 1.3 μm ...

Temperature and wavelength dependence of recombination processes in 1.5 mu m InGaAlAs/InP-based lasers

Sweeney, Stephen
McConville, D
Jin, SR
Ahmad, CN
Masse, NF
Bouyssou, RX
Adams, Alfred
Hanke, C

January 2004

The improved thermal stability of 1.5 mu m InGaAlAs- compared with InGaAs-based lasers is investigat...

Radiative and Non-Radiative Recombination in 1.3μm and 1.5μm Semiconductor Diode Lasers.

Sweeney, Stephen John.

January 1999

We investigated the threshold current, Ith, and its temperature dependence, To(Ith), for 1.3μm and 1...

Observation of reduced non-radiative recombination current in 1.3-μm AlGaInAs/InP multiple-quantum-well lasers

Higashi, T
Sweeney, SJ
Phillips, AF
Adams, AR
O'Reilly, EP
Uchida, T
Fujii, T

December 1998

We investigated experimentally the temperature dependence of the threshold current in 1.3-μm AlGaInA...

Determination of the influence of Auger recombination on the threshold current of 1.3 μm and 1.5 μm InGaAs(P) strained-layer lasers and its variation with temperature

Abstract

Extracted data

Determination of the influence of Auger recombination on the threshold current of 1.3 μm and 1.5 μm InGaAs(P) strained-layer lasers and its variation with temperature

Abstract

Extracted data

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