The design and modeling of power FETs for microwave power amplifiers is described, based on physical and equivalent circuit models coupled to electro-thermal and electromagnetic simulations. The results from this work reveal complex behavior in large high frequency power devices and facilitate the design of very high power, high efficiency transistors. This approach allows the maximizing of power added efficiency and assists in optimizing the thermal management and circuit design. Copyright 2006 IEICE
This paper presents original results provided by combination of Enhancement-Mode (E-mode) with metam...
Background and Objectives: A very difficult and urgent task is to obtain high output powers of...
This paper describes a new approach to accurately characterise very high power, Si BJT, devices capa...
The design and modeling of power FETs for microwave power amplifiers is described, based on physical...
A comprehensive modeling approach is applied to the study of pHEMT transistors for microwave power a...
© Cambridge University Press 2007 and Cambridge University Press, 2009.This 2007 book is a comprehen...
A comprehensive modelling approach is applied to the study of power pHEMT devices for high efficien...
Abstract — A comprehensive modelling approach is ap-plied to the study of power pHEMT devices for h...
Abstract — The coupling between charge transport, heat and energy flow required to model high frequ...
The introduction of next generation mobile systems and alternative applications demands significant ...
This paper demonstrates a practical approach to developing a geometrically scalable thermal resistan...
The coupling between charge transport, heat and energy flow required to model high frequency power d...
Results are presented for the first fully physical, time-dependent, coupled electro-thermal simulati...
The paper discusses a general approach to the electrothermal simulation of nonlinear FET circuits. T...
In this paper, we present a multi-physics approach for the simulation of high-power microwave transi...
This paper presents original results provided by combination of Enhancement-Mode (E-mode) with metam...
Background and Objectives: A very difficult and urgent task is to obtain high output powers of...
This paper describes a new approach to accurately characterise very high power, Si BJT, devices capa...
The design and modeling of power FETs for microwave power amplifiers is described, based on physical...
A comprehensive modeling approach is applied to the study of pHEMT transistors for microwave power a...
© Cambridge University Press 2007 and Cambridge University Press, 2009.This 2007 book is a comprehen...
A comprehensive modelling approach is applied to the study of power pHEMT devices for high efficien...
Abstract — A comprehensive modelling approach is ap-plied to the study of power pHEMT devices for h...
Abstract — The coupling between charge transport, heat and energy flow required to model high frequ...
The introduction of next generation mobile systems and alternative applications demands significant ...
This paper demonstrates a practical approach to developing a geometrically scalable thermal resistan...
The coupling between charge transport, heat and energy flow required to model high frequency power d...
Results are presented for the first fully physical, time-dependent, coupled electro-thermal simulati...
The paper discusses a general approach to the electrothermal simulation of nonlinear FET circuits. T...
In this paper, we present a multi-physics approach for the simulation of high-power microwave transi...
This paper presents original results provided by combination of Enhancement-Mode (E-mode) with metam...
Background and Objectives: A very difficult and urgent task is to obtain high output powers of...
This paper describes a new approach to accurately characterise very high power, Si BJT, devices capa...