Electron paramagnetic resonance (EPR) and photoluminescence (PL) spectroscopy have been used to examine the structure and optical properties of erbium-impurity complexes formed in float-zone Si by multiple-energy implants at 77 K of Er together with either O or F. After implantation a 2-μm-thick amorphous layer was formed containing an almost uniform concentration of Er (1019/cm3)and O (3×1019/cm3 or 1020/cm3) or F (1020/cm3). Samples were annealed in nitrogen at 450 °C for 30 min (treatment A), treatment A+620 °C for 3 h (treatment B), treatment B+900 °C for 30 s (treatment C) or treatment B+900 °C for 30 min (treatment D). Samples coimplanted to have 3×1019O/cm3 and subject to treatment C show a broad line anisotropic EPR spectrum. These ...
Visible luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er an...
A detailed investigation on the excitation and deexcitation processes of Er3+ in Si is reported. In ...
In this paper our recent work on erbium implantation for optical doping of silicon is reviewed. It i...
Electron paramagnetic resonance (EPR) and photoluminescence (PL) spectroscopy have been used to exam...
The electrical and optical properties of Er-implanted Si are shown to be critically dependent on the...
The several processes required to achieve Er luminescence in Si are investigated. In particular, the...
The several processes required to achieve Er luminescence in Si are investigated. In particular, the...
The electrical and optical properties of Er-implanted Si are shown to be critically dependent on the...
Er implanted Si is a candidate for quantum and photonic applications; however, several different Er ...
7 pags.; 7 figs.The optical activation, excitation, and concentration limits of erbium in crystal Si...
Electron paramagnetic resonance measurements have been made on samples of float zone silicon, implan...
The intra-4f transition close to 1.54 mu m of Er implanted into Si shows rich fine structure due to ...
Erbium ions incorporated into amorphous hydrogenated silicon suboxides (a-SiOx:H) allow to overcome ...
Er implanted Si is a candidate for quantum and photonic applications; however, several different Er ...
8 págs.; 7 figs.The luminescence quenching of Er in crystalline Si at temperatures between 77 and 30...
Visible luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er an...
A detailed investigation on the excitation and deexcitation processes of Er3+ in Si is reported. In ...
In this paper our recent work on erbium implantation for optical doping of silicon is reviewed. It i...
Electron paramagnetic resonance (EPR) and photoluminescence (PL) spectroscopy have been used to exam...
The electrical and optical properties of Er-implanted Si are shown to be critically dependent on the...
The several processes required to achieve Er luminescence in Si are investigated. In particular, the...
The several processes required to achieve Er luminescence in Si are investigated. In particular, the...
The electrical and optical properties of Er-implanted Si are shown to be critically dependent on the...
Er implanted Si is a candidate for quantum and photonic applications; however, several different Er ...
7 pags.; 7 figs.The optical activation, excitation, and concentration limits of erbium in crystal Si...
Electron paramagnetic resonance measurements have been made on samples of float zone silicon, implan...
The intra-4f transition close to 1.54 mu m of Er implanted into Si shows rich fine structure due to ...
Erbium ions incorporated into amorphous hydrogenated silicon suboxides (a-SiOx:H) allow to overcome ...
Er implanted Si is a candidate for quantum and photonic applications; however, several different Er ...
8 págs.; 7 figs.The luminescence quenching of Er in crystalline Si at temperatures between 77 and 30...
Visible luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er an...
A detailed investigation on the excitation and deexcitation processes of Er3+ in Si is reported. In ...
In this paper our recent work on erbium implantation for optical doping of silicon is reviewed. It i...