Effects of ion implantation on electron centers in hydrogenated amorphous carbon films

Konchits, AA
Valakh, MY
Shanina, BD
Kolesnik, SP
Yanchuk, IB
Carey, JD
Silva, SRP

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Publication date

May 2003

DOI

10.1063/1.1564280

Publisher

AIP Publishing

Abstract

Effects of ion implantation on electron centers were investigated in hydrogenated amorphous carbon films. Electron spin resonance and Raman spectra measurements were carried out during the analysis. It was found that ion implantation reduces the contents of hydrogen and initiates the radiation defects in hydrogenated amorphous carbon films

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Effects of ion implantation on electron centers in hydrogenated amorphous carbon films

Abstract

Extracted data

Effects of ion implantation on electron centers in hydrogenated amorphous carbon films

Abstract

Extracted data

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