Add to ORKGWe find that non-radiative recombination plays an important role in p-doped quantum-dot lasers. Along with carrier thermalisation effects, this is responsible for the temperature insensitive operation as observed around room temperature in these lasers.</p
We show that the transparency current plays a central role in setting the temperature dependence of ...
Gain saturation increases the radiative component, J(rad), of the threshold current density, J(th), ...
Unlike InAs/GaAs quantum dot lasers, in 1.55μm InAs/InP devices, non-radiative recombination dominat...
We find that non-radiative recombination plays an important role in p-doped quantum-dot lasers. Alon...
The role of changes in gain and nonradiative recombination as a function of temperature in p-doped q...
Twenty five years ago Arakawa suggested that by confining carriers in three dimensions (in quantum d...
The drive for low threshold and temperature-stable semiconductor lasers for telecommunication applic...
The gain of p-doped and intrinsic InAs/GaAs quantum dot lasers is studied at room temperature and at...
The radiative and nonradiative components of the threshold current in 1.3 mu m, p-doped and undoped ...
A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous br...
We examine the temperature dependence of threshold current in self-assembled quantum dot lasers focu...
A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous br...
The authors measure the temperature dependence of the components of threshold current of 1300?nm und...
The temperature dependencies of the recombination and gain processes reveal intrinsic limitations on...
We have fabricated 1.3-mu m InAs-GaAs quantum-dot (QD) lasers with and without p-type modulation dop...
We show that the transparency current plays a central role in setting the temperature dependence of ...
Gain saturation increases the radiative component, J(rad), of the threshold current density, J(th), ...
Unlike InAs/GaAs quantum dot lasers, in 1.55μm InAs/InP devices, non-radiative recombination dominat...
We find that non-radiative recombination plays an important role in p-doped quantum-dot lasers. Alon...
The role of changes in gain and nonradiative recombination as a function of temperature in p-doped q...
Twenty five years ago Arakawa suggested that by confining carriers in three dimensions (in quantum d...
The drive for low threshold and temperature-stable semiconductor lasers for telecommunication applic...
The gain of p-doped and intrinsic InAs/GaAs quantum dot lasers is studied at room temperature and at...
The radiative and nonradiative components of the threshold current in 1.3 mu m, p-doped and undoped ...
A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous br...
We examine the temperature dependence of threshold current in self-assembled quantum dot lasers focu...
A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous br...
The authors measure the temperature dependence of the components of threshold current of 1300?nm und...
The temperature dependencies of the recombination and gain processes reveal intrinsic limitations on...
We have fabricated 1.3-mu m InAs-GaAs quantum-dot (QD) lasers with and without p-type modulation dop...
We show that the transparency current plays a central role in setting the temperature dependence of ...
Gain saturation increases the radiative component, J(rad), of the threshold current density, J(th), ...
Unlike InAs/GaAs quantum dot lasers, in 1.55μm InAs/InP devices, non-radiative recombination dominat...