We present combined experimental and theoretical investigations of the picosecond emission dynamics of broad-area semiconductor lasers (BALs). We enhance the weak longitudinal self-mode-locking that is inherent to BALs by injecting a single optical 50-ps pulse, which triggers the output of a distinct regular train of 13-ps pulses. Modeling based on multimode Maxwell-Bloch equations illustrates how the dynamic interaction of the injected pulse with the internal laser field efficiently couples the longitudinal modes and synchronizes the output across the laser stripe. Thus, our results reveal insight into the complex interplay between lateral and longitudinal dynamics in BALs, at the same time indicating their potential for short optical puls...
We describe the generation of femtosecond high power optical pulses using hybrid passive-active mode...
We report the generation of short, transform-limited, ~18 ps optical pulses from an external fiber B...
This research focuses on three types of GaAs-based semiconductor devices, namely oxide confined vert...
We present combined experimental and theoretical investigations of the picosecond emission dynamics ...
This thesis describes the modeling and characterization of mode-locked semiconductor lasers. An enha...
Experimental results of the combination of transverse mode selection and active mode-locking with an...
Mode locking of semiconductor lasers with external dispersive cavities is investigated both experime...
Abstract We experimentally observed giga-hertz (GHz) complementary intensity oscillations in differe...
Abstract-The kinetics of generating ultrashort light pulses by gain switching unbiased semiconductor...
We present a theoretical study of semiconductor mode-locked lasers at a phenomenological level. We u...
Optical pulses are used as bits to transmit information. Controlled pulse generation is required for...
We investigate the dynamics of semiconductor lasers subject to time-delayed optical feedback from th...
The chapter reviews the physical foundations, the theoretical analysis, the experimental implementat...
We describe the generation of femtosecond high power optical pulses using hybrid passive-active mode...
The ability to generate phase-stabilized trains of ultrafast laser pulses by mode-locking underpins ...
We describe the generation of femtosecond high power optical pulses using hybrid passive-active mode...
We report the generation of short, transform-limited, ~18 ps optical pulses from an external fiber B...
This research focuses on three types of GaAs-based semiconductor devices, namely oxide confined vert...
We present combined experimental and theoretical investigations of the picosecond emission dynamics ...
This thesis describes the modeling and characterization of mode-locked semiconductor lasers. An enha...
Experimental results of the combination of transverse mode selection and active mode-locking with an...
Mode locking of semiconductor lasers with external dispersive cavities is investigated both experime...
Abstract We experimentally observed giga-hertz (GHz) complementary intensity oscillations in differe...
Abstract-The kinetics of generating ultrashort light pulses by gain switching unbiased semiconductor...
We present a theoretical study of semiconductor mode-locked lasers at a phenomenological level. We u...
Optical pulses are used as bits to transmit information. Controlled pulse generation is required for...
We investigate the dynamics of semiconductor lasers subject to time-delayed optical feedback from th...
The chapter reviews the physical foundations, the theoretical analysis, the experimental implementat...
We describe the generation of femtosecond high power optical pulses using hybrid passive-active mode...
The ability to generate phase-stabilized trains of ultrafast laser pulses by mode-locking underpins ...
We describe the generation of femtosecond high power optical pulses using hybrid passive-active mode...
We report the generation of short, transform-limited, ~18 ps optical pulses from an external fiber B...
This research focuses on three types of GaAs-based semiconductor devices, namely oxide confined vert...