It is well-known that GaN-on-GaN LEDs have lower dislocation density compared to GaN-on-sapphire LEDs. Nonetheless, the overall efficiency of the GaN-on-GaN LEDs is still lower than the GaN-on-sapphire LEDs. The problem is associated to total internal reflection effect which is higher in the LEDs. The effect decreases light extraction efficiency. Roughening the backside (N-face) of GaN substrate via potassium hydroxide (KOH) etching can reduce the effect. Through the roughening, hexagonal-pyramid structures are formed and they promote multiple light scatterings, thereby increasing the LEE. However, the roughening by KOH etching is difficult to control and results in low density of the hexagonal-pyramid structures . This work proposes to r...
Due to the superior advantages of high energy conversion efficiency, high brightness, high reliabili...
p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based ...
Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale t...
Patterned sapphire substrate (PSS) has been used to improve both internal quantum efficiency (IQE) a...
We report the chemical etching characteristics of Ga-face and N-face GaN using phosphoric acid (H3PO...
Enhancing the light extraction efficiency is an important problem in the manufacturing of GaN-based ...
Abstract — In this letter, the numerical and experimental demonstrations for enhancement of light ex...
Abstract—We investigate the mechanism responding for perfor-mance enhancement of gallium nitride (Ga...
The InGaN-based light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN ...
Wet etching has been widely used in defect evaluation for Ga-face GaN and surface roughness for N-fa...
Roughening by anisotropic etching of N-face gallium nitride is the key aspect in today’s production ...
Technologies in III-Nitride based Light Emitting Diode (LED) have been developing rapidly in the pas...
Etching of gallium nitride is a key step in the production of blue and white light-emitting diodes ...
The GaN-based LEDs external quantum efficiency (EQE) is significantly improved by using the patterne...
Chemical wet etching on c-plane sapphire wafers by three etching solutions (H3PO4, H2SO4, and H3PO4/...
Due to the superior advantages of high energy conversion efficiency, high brightness, high reliabili...
p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based ...
Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale t...
Patterned sapphire substrate (PSS) has been used to improve both internal quantum efficiency (IQE) a...
We report the chemical etching characteristics of Ga-face and N-face GaN using phosphoric acid (H3PO...
Enhancing the light extraction efficiency is an important problem in the manufacturing of GaN-based ...
Abstract — In this letter, the numerical and experimental demonstrations for enhancement of light ex...
Abstract—We investigate the mechanism responding for perfor-mance enhancement of gallium nitride (Ga...
The InGaN-based light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN ...
Wet etching has been widely used in defect evaluation for Ga-face GaN and surface roughness for N-fa...
Roughening by anisotropic etching of N-face gallium nitride is the key aspect in today’s production ...
Technologies in III-Nitride based Light Emitting Diode (LED) have been developing rapidly in the pas...
Etching of gallium nitride is a key step in the production of blue and white light-emitting diodes ...
The GaN-based LEDs external quantum efficiency (EQE) is significantly improved by using the patterne...
Chemical wet etching on c-plane sapphire wafers by three etching solutions (H3PO4, H2SO4, and H3PO4/...
Due to the superior advantages of high energy conversion efficiency, high brightness, high reliabili...
p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based ...
Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale t...