A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processinginduced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "...
Alloyed semiconductor crystals, such as germanium-silicon (GeSi) and various II-VI alloyed crystals,...
Compound semiconductor crystals, such as gallium arsenide and indium phosphide crystals, have many i...
Commonly, germanium crystals are grown after the Czochralski (CZ) method. The crucible-free pedestal...
A series of Ge Si crystal growth experiments are planned to be conducted in the Low 1-x x Gradient F...
A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient ...
A series of Ge(sub 1-x)Si(sub x) crystal growth experiments are planned to be conducted in the Low G...
A series of Ge(sub 1-x) Si(sub x) crystal growth experiments are planned to be conducted in the Low ...
A series of GeSi crystal growth experiments are planned to be conducted in the Low Gradient Furnace ...
It is well established that crystals grown without contact with a container have far superior qualit...
Crystals grown without being in contact with a container have superior quality to otherwise similar ...
Four different Bridgman growth experiments on Ge:Ga and Ge(sub x)Si(sub 1-x) were performed under mi...
Bridgman and Float-zone crystal growth experiments are planned for NASA's First Materials Science Re...
During the past 40 years, dozens of semiconductor crystal growth experiments have been conducted in ...
Detached (or dewetted) Bridgman crystal growth defines that process in which a gap exists between a ...
Detached growth, also referred to as dewetted growth, is a Bridgman crystal growth process in which ...
Alloyed semiconductor crystals, such as germanium-silicon (GeSi) and various II-VI alloyed crystals,...
Compound semiconductor crystals, such as gallium arsenide and indium phosphide crystals, have many i...
Commonly, germanium crystals are grown after the Czochralski (CZ) method. The crucible-free pedestal...
A series of Ge Si crystal growth experiments are planned to be conducted in the Low 1-x x Gradient F...
A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient ...
A series of Ge(sub 1-x)Si(sub x) crystal growth experiments are planned to be conducted in the Low G...
A series of Ge(sub 1-x) Si(sub x) crystal growth experiments are planned to be conducted in the Low ...
A series of GeSi crystal growth experiments are planned to be conducted in the Low Gradient Furnace ...
It is well established that crystals grown without contact with a container have far superior qualit...
Crystals grown without being in contact with a container have superior quality to otherwise similar ...
Four different Bridgman growth experiments on Ge:Ga and Ge(sub x)Si(sub 1-x) were performed under mi...
Bridgman and Float-zone crystal growth experiments are planned for NASA's First Materials Science Re...
During the past 40 years, dozens of semiconductor crystal growth experiments have been conducted in ...
Detached (or dewetted) Bridgman crystal growth defines that process in which a gap exists between a ...
Detached growth, also referred to as dewetted growth, is a Bridgman crystal growth process in which ...
Alloyed semiconductor crystals, such as germanium-silicon (GeSi) and various II-VI alloyed crystals,...
Compound semiconductor crystals, such as gallium arsenide and indium phosphide crystals, have many i...
Commonly, germanium crystals are grown after the Czochralski (CZ) method. The crucible-free pedestal...