Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude...
Crystalline silicon carbide is a chemically inert wide band gap semiconductor with good mechanical s...
Accurate quantification of combustor pressure dynamics for the primary purpose of experimental valid...
The slow etching rate of conventional micro-machining processes is hindering the use of bulk silicon...
MEMS-based 4H-SiC piezoresistive pressure sensors have been demonstrated at 800 C, leading to the di...
We report the first demonstration of MEMS-based 4H-SiC piezoresistive pressure sensors tested at 750...
We have performed the initial characterization of single crystal 4H silicon carbide (4H-SiC) pressur...
The development of new aircraft engines requires the measurement of pressures in hot areas such as t...
The slow etching rate of conventional micro-machining processes is hindering the use of bulk silicon...
In this program, Nuonics, Inc. has studied the fundamentals of a new Silicon Carbide (SiC) materials...
Pressure measurement under high temperature environments is required in many engineering application...
The NASA aerospace program, in particular, requires breakthrough instrumentation inside the combusti...
Piezoresistive mechanical sensors play a very important role in modern industries. MEMS pressure sen...
Pressure measurement under harsh environments, especially at high temperatures, is of great interest...
We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (...
This final report contains the main results from a 3-year program to further investigate the merits ...
Crystalline silicon carbide is a chemically inert wide band gap semiconductor with good mechanical s...
Accurate quantification of combustor pressure dynamics for the primary purpose of experimental valid...
The slow etching rate of conventional micro-machining processes is hindering the use of bulk silicon...
MEMS-based 4H-SiC piezoresistive pressure sensors have been demonstrated at 800 C, leading to the di...
We report the first demonstration of MEMS-based 4H-SiC piezoresistive pressure sensors tested at 750...
We have performed the initial characterization of single crystal 4H silicon carbide (4H-SiC) pressur...
The development of new aircraft engines requires the measurement of pressures in hot areas such as t...
The slow etching rate of conventional micro-machining processes is hindering the use of bulk silicon...
In this program, Nuonics, Inc. has studied the fundamentals of a new Silicon Carbide (SiC) materials...
Pressure measurement under high temperature environments is required in many engineering application...
The NASA aerospace program, in particular, requires breakthrough instrumentation inside the combusti...
Piezoresistive mechanical sensors play a very important role in modern industries. MEMS pressure sen...
Pressure measurement under harsh environments, especially at high temperatures, is of great interest...
We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (...
This final report contains the main results from a 3-year program to further investigate the merits ...
Crystalline silicon carbide is a chemically inert wide band gap semiconductor with good mechanical s...
Accurate quantification of combustor pressure dynamics for the primary purpose of experimental valid...
The slow etching rate of conventional micro-machining processes is hindering the use of bulk silicon...