We report on response of newly designed 4H-SiC Schottky barrier diode (SBD) detector to alpha, beta and gamma particles. In order to optimize SiC SBD detector’s thermal neutron efficiency, it’s of particular importance to understand its behavior in various radiation fields. The optimal size of the SBD is limited by degradation of electronic properties, and consequently their charge particle detection. We have manufactured diodes up to 3 x 3 mm active surface area to study those properties in correlation with increasing of detector size. Approximately 25 µm thick epitaxial layer is grown on SiC substrate by chemical vapor deposition, which is sufficient to stop alpha particles up to 6.8 MeV. Different active volume sizes of the detector base...
High performance SiC detectors for ionising radiation have been designed, manufactured and tested. S...
Harsh radiation environments are characterised by high temperature, high radiation fluence high pres...
Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environm...
We report the response of newly designed 4H-SiC Schottky barrier diode (SBD) detector prototype to a...
Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of...
In the present work high-resolution alpha particle detectors have been fabricated on high quality 20...
We report the results of an experimental study on the radiation hardness of 4H-SiC diodes used as al...
The fabrication and characterization of SiC Schottky diodes for the detection of alpha particles at ...
Silicon Carbide (SiC) is an indirect wide bandgap semiconductor with high thermal conductivity, high...
Particle detectors were made using semiconductor epitaxial 4H-SiC as the detection medium. The inves...
In this work we report electrical characterizations on heavily irradiated epitaxial H-4-SiC Schottky...
This work presents measurements of the charge-collection properties of 4H-SiC Schottky diodes under ...
Owing to their low dark current, high transparency, high thermal conductivity, and potential radiati...
Schottky barrier radiation detectors were fabricated on 12 μm n-type 4H-SiC epitaxial layers grown o...
We present experimental and theoretical data on the charge collection properties of a 4H-SiC epitaxi...
High performance SiC detectors for ionising radiation have been designed, manufactured and tested. S...
Harsh radiation environments are characterised by high temperature, high radiation fluence high pres...
Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environm...
We report the response of newly designed 4H-SiC Schottky barrier diode (SBD) detector prototype to a...
Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of...
In the present work high-resolution alpha particle detectors have been fabricated on high quality 20...
We report the results of an experimental study on the radiation hardness of 4H-SiC diodes used as al...
The fabrication and characterization of SiC Schottky diodes for the detection of alpha particles at ...
Silicon Carbide (SiC) is an indirect wide bandgap semiconductor with high thermal conductivity, high...
Particle detectors were made using semiconductor epitaxial 4H-SiC as the detection medium. The inves...
In this work we report electrical characterizations on heavily irradiated epitaxial H-4-SiC Schottky...
This work presents measurements of the charge-collection properties of 4H-SiC Schottky diodes under ...
Owing to their low dark current, high transparency, high thermal conductivity, and potential radiati...
Schottky barrier radiation detectors were fabricated on 12 μm n-type 4H-SiC epitaxial layers grown o...
We present experimental and theoretical data on the charge collection properties of a 4H-SiC epitaxi...
High performance SiC detectors for ionising radiation have been designed, manufactured and tested. S...
Harsh radiation environments are characterised by high temperature, high radiation fluence high pres...
Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environm...