Add to ORKGIn this paper we present the design and measurement results, both on-wafer and in package, of an ultra-low-noise and wideband monolithic microwave integrated circuit (MMIC) amplifier in the frequency range of 75 to 116 GHz. The three-stage amplifier packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology achieves a record noise temperature of 23 K at 108 GHz when cryogenically cooled to 27 K. The measured gain is 22 to 27 dB for frequency range of 75 to 116 GHz. Furthermore, the amplifier utilizes four finger devices with total gate width of 60 um resulting for improved linearity
A 0.5-13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP...
Two monolithic microwave integrated circuit low noise amplifiers for 67-116 GHz have been developed ...
This paper reports the development of a cryogenic wideband low-noise amplifier based on a 50-nm meta...
In this paper we present the design and measurement results, both on-wafer and in package, of an ult...
In this paper we present the design and measurement results, both on-wafer and in package, of an ult...
In this work, we describe monolithic millimeter-wave integrated circuit (MMIC) Low Noise Amplifier (...
In this paper we propose a parallel two-finger unit transistor MMIC low-noise amplifier design techn...
In this work, we describe monolithic millimeter-wave integrated circuit (MMIC) Low Noise Amplifier (...
In this paper, we describe two monolithic millimeter-wave integrated circuit (MMIC) low noise amplif...
In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-tempe...
In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-tempe...
In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50...
Due to copyright restrictions, the access to the full text of this article is only available via sub...
In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50...
In this paper, monolithic microwave integrated circuit (MMIC) broadband low-noise amplifiers (LNAs) ...
A 0.5-13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP...
Two monolithic microwave integrated circuit low noise amplifiers for 67-116 GHz have been developed ...
This paper reports the development of a cryogenic wideband low-noise amplifier based on a 50-nm meta...
In this paper we present the design and measurement results, both on-wafer and in package, of an ult...
In this paper we present the design and measurement results, both on-wafer and in package, of an ult...
In this work, we describe monolithic millimeter-wave integrated circuit (MMIC) Low Noise Amplifier (...
In this paper we propose a parallel two-finger unit transistor MMIC low-noise amplifier design techn...
In this work, we describe monolithic millimeter-wave integrated circuit (MMIC) Low Noise Amplifier (...
In this paper, we describe two monolithic millimeter-wave integrated circuit (MMIC) low noise amplif...
In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-tempe...
In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-tempe...
In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50...
Due to copyright restrictions, the access to the full text of this article is only available via sub...
In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50...
In this paper, monolithic microwave integrated circuit (MMIC) broadband low-noise amplifiers (LNAs) ...
A 0.5-13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP...
Two monolithic microwave integrated circuit low noise amplifiers for 67-116 GHz have been developed ...
This paper reports the development of a cryogenic wideband low-noise amplifier based on a 50-nm meta...