Hardness assurance test results of Intel state-of-the-art 14nm Broadwell U-series processor / System-on-a-Chip (SoC) for total ionizing dose (TID) are presented, along with exploratory results from trials at a medical proton facility. Test method builds upon previous efforts [1] by utilizing commercial laptop motherboards and software stress applications as opposed to more traditional automated test equipment (ATE)
The purpose of this test is to assess the single event effects (SEE) and radiation susceptibility of...
The paper shows the radiation effects on 65 nm standard CMOS technology and RHBD (Radiation Har...
Total ionizing dose and displacement damage testing was performed to characterize and determine the ...
In this study the 14 nm Intel Broadwell 5th generation core series 5005U-i3 and 5200U-i5 was mounted...
Testing of an Intel 14nm desktop processor was conducted under proton irradiation. We share lessons ...
This presentation reports the results of recent proton and heavy ion Single Event Effect (SEE) testi...
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displaceme...
The development of a hardened silicon power transistor for operation in severe nuclear radiation env...
The Intel 80186 sixteen-bit microprocessor is an example of a high performance device (8 MHz) needed...
Single-event effect (SEE) and total ionizing dose (TID) test results are presented for various harde...
Power systems designed for use in NASA space missions are required to work reliably under harsh cond...
This paper investigates the TID sensitivity of silicon-based technologies at several MGy irradiation...
Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs...
Total ionizing dose and displacement damage testing was performed to characterize and determine the ...
With the evolution of modern Complementary Metal-Oxide-Semiconductor (CMOS) technology, transistor f...
The purpose of this test is to assess the single event effects (SEE) and radiation susceptibility of...
The paper shows the radiation effects on 65 nm standard CMOS technology and RHBD (Radiation Har...
Total ionizing dose and displacement damage testing was performed to characterize and determine the ...
In this study the 14 nm Intel Broadwell 5th generation core series 5005U-i3 and 5200U-i5 was mounted...
Testing of an Intel 14nm desktop processor was conducted under proton irradiation. We share lessons ...
This presentation reports the results of recent proton and heavy ion Single Event Effect (SEE) testi...
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displaceme...
The development of a hardened silicon power transistor for operation in severe nuclear radiation env...
The Intel 80186 sixteen-bit microprocessor is an example of a high performance device (8 MHz) needed...
Single-event effect (SEE) and total ionizing dose (TID) test results are presented for various harde...
Power systems designed for use in NASA space missions are required to work reliably under harsh cond...
This paper investigates the TID sensitivity of silicon-based technologies at several MGy irradiation...
Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs...
Total ionizing dose and displacement damage testing was performed to characterize and determine the ...
With the evolution of modern Complementary Metal-Oxide-Semiconductor (CMOS) technology, transistor f...
The purpose of this test is to assess the single event effects (SEE) and radiation susceptibility of...
The paper shows the radiation effects on 65 nm standard CMOS technology and RHBD (Radiation Har...
Total ionizing dose and displacement damage testing was performed to characterize and determine the ...