NASA has been developing very high temperature semiconductor integrated circuits for use in the hot sections of aircraft engines and for Venus exploration. This paper reports on long-term 500 C electrical operation of prototype 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). As of this writing, some devices have surpassed 4000 hours of continuous 500 C electrical operation in oxidizing air atmosphere with minimal change in relevant electrical parameters
This ECSCRM 2016 submission presents further electrical testing and microscopic post-failure studies...
Operational testing of prototype 4H-SiC JFET ICs across an unrivaled ambient temperature span in exc...
A separate submission to this conference reports that 4H-SiC Junction Field Effect Transistor (JFET)...
The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits...
The fabrication and testing of the first semiconductor transistors and small-scale integrated circui...
While there have been numerous reports of short-term transistor operation at 500 degree C or above, ...
This paper updates the long-term 500 C electrical testing results from 6H-SiC junction field effect ...
This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconne...
This report describes more than 5000 hours of successful 500 C operation of semiconductor integrated...
This work describes recent progress in the design, processing, and testing of significantly up-scale...
This work describes recent progress in the design, processing, upscaling, and testing of 500C durabl...
The High Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research C...
This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconne...
Discrete medium-power diodes and field-effect transistors are expected to be among the first high-te...
We have reported SiC integrated circuits (IC's) with two levels of metal interconnect that have demo...
This ECSCRM 2016 submission presents further electrical testing and microscopic post-failure studies...
Operational testing of prototype 4H-SiC JFET ICs across an unrivaled ambient temperature span in exc...
A separate submission to this conference reports that 4H-SiC Junction Field Effect Transistor (JFET)...
The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits...
The fabrication and testing of the first semiconductor transistors and small-scale integrated circui...
While there have been numerous reports of short-term transistor operation at 500 degree C or above, ...
This paper updates the long-term 500 C electrical testing results from 6H-SiC junction field effect ...
This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconne...
This report describes more than 5000 hours of successful 500 C operation of semiconductor integrated...
This work describes recent progress in the design, processing, and testing of significantly up-scale...
This work describes recent progress in the design, processing, upscaling, and testing of 500C durabl...
The High Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research C...
This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconne...
Discrete medium-power diodes and field-effect transistors are expected to be among the first high-te...
We have reported SiC integrated circuits (IC's) with two levels of metal interconnect that have demo...
This ECSCRM 2016 submission presents further electrical testing and microscopic post-failure studies...
Operational testing of prototype 4H-SiC JFET ICs across an unrivaled ambient temperature span in exc...
A separate submission to this conference reports that 4H-SiC Junction Field Effect Transistor (JFET)...
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